CS6N70_B3D1-G MOSFET. Datasheet pdf. Equivalent
Type Designator: CS6N70_B3D1-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 88 pF
Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm
Package: TO251L1
CS6N70_B3D1-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS6N70_B3D1-G Datasheet (PDF)
0.1. cs6n70 b3d1-g.pdf 
Size:231K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N70 B3D1-G General Description： VDSS 700 V CS6N70 B3D1-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
7.1. cs6n70 a3d1-g.pdf Size:236K _crhj
Silicon N-Channel Power MOSFET ○ R CS6N70 A3D1-G General Description： VDSS 700 V CS6N70 A3D1-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
7.2. cs6n70 crhd.pdf Size:225K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N70 CRHD General Description： VDSS 700 V CS6N70 CRHD, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
7.3. cs6n70 a3h.pdf Size:727K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N70 A3H General Description： VDSS 700 V CS6N70 A3H,the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
7.4. cs6n70 a4d-g.pdf Size:357K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N70 A4D-G General Description： VDSS 700 V CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25℃) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
7.5. cs6n70 a8d.pdf Size:234K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N70 A8D General Description： VDSS 700 V CS6N70 A8D, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 100 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
7.6. cs6n70 a3d-g.pdf Size:238K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N70 A3D-G General Description： VDSS 700 V CS6N70 A3D-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
