All MOSFET. CS6N70_B3D1-G Datasheet

 

CS6N70_B3D1-G MOSFET. Datasheet pdf. Equivalent

Type Designator: CS6N70_B3D1-G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 88 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: TO251L1

CS6N70_B3D1-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS6N70_B3D1-G Datasheet (PDF)

1.1. cs6n70 b3d1-g.pdf Size:231K _crhj

CS6N70_B3D1-G
CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 B3D1-G General Description: VDSS 700 V CS6N70 B3D1-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

3.1. cs6n70 a3d1-g.pdf Size:236K _crhj

CS6N70_B3D1-G
CS6N70_B3D1-G

Silicon N-Channel Power MOSFET ○ R CS6N70 A3D1-G General Description: VDSS 700 V CS6N70 A3D1-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

3.2. cs6n70 crhd.pdf Size:225K _crhj

CS6N70_B3D1-G
CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 CRHD General Description: VDSS 700 V CS6N70 CRHD, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 3.3. cs6n70 a3h.pdf Size:727K _crhj

CS6N70_B3D1-G
CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 A3H General Description: VDSS 700 V CS6N70 A3H,the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

3.4. cs6n70 a4d-g.pdf Size:357K _crhj

CS6N70_B3D1-G
CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 A4D-G General Description: VDSS 700 V CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25℃) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 3.5. cs6n70 a8d.pdf Size:234K _crhj

CS6N70_B3D1-G
CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 A8D General Description: VDSS 700 V CS6N70 A8D, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 100 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

3.6. cs6n70 a3d-g.pdf Size:238K _crhj

CS6N70_B3D1-G
CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 A3D-G General Description: VDSS 700 V CS6N70 A3D-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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