All MOSFET. CS6N70_B3D1-G Datasheet

 

CS6N70_B3D1-G MOSFET. Datasheet pdf. Equivalent

Type Designator: CS6N70_B3D1-G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 88 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: TO251L1

CS6N70_B3D1-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS6N70_B3D1-G Datasheet (PDF)

1.1. cs6n70 b3d1-g.pdf Size:231K _crhj

CS6N70_B3D1-G CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 B3D1-G General Description： VDSS 700 V CS6N70 B3D1-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

3.1. cs6n70 a3d1-g.pdf Size:236K _crhj

CS6N70_B3D1-G CS6N70_B3D1-G

Silicon N-Channel Power MOSFET ○ R CS6N70 A3D1-G General Description： VDSS 700 V CS6N70 A3D1-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

3.2. cs6n70 a3d-g.pdf Size:238K _crhj

CS6N70_B3D1-G CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 A3D-G General Description： VDSS 700 V CS6N70 A3D-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 3.3. cs6n70 a3h.pdf Size:727K _crhj

CS6N70_B3D1-G CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 A3H General Description： VDSS 700 V CS6N70 A3H,the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

3.4. cs6n70 crhd.pdf Size:225K _crhj

CS6N70_B3D1-G CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 CRHD General Description： VDSS 700 V CS6N70 CRHD, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 3.5. cs6n70 a4d-g.pdf Size:357K _crhj

CS6N70_B3D1-G CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 A4D-G General Description： VDSS 700 V CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25℃) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

3.6. cs6n70 a8d.pdf Size:234K _crhj

CS6N70_B3D1-G CS6N70_B3D1-G

Silicon N-Channel Power MOSFET R ○ CS6N70 A8D General Description： VDSS 700 V CS6N70 A8D, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 100 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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