NCE3007S PDF and Equivalents Search

 

NCE3007S Specs and Replacement

Type Designator: NCE3007S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SO8

NCE3007S substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE3007S datasheet

 ..1. Size:394K  ncepower
nce3007s.pdf pdf_icon

NCE3007S

Pb Free Product http //www.ncepower.com NCE3007S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features VDS =-30V,ID =-6.5A RDS(ON) ... See More ⇒

 ..2. Size:803K  cn vbsemi
nce3007s.pdf pdf_icon

NCE3007S

NCE3007S www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top ... See More ⇒

 8.1. Size:268K  ncepower
nce3008m.pdf pdf_icon

NCE3007S

Pb Free Product http //www.ncepower.com NCE3008M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic diagram General Feature ... See More ⇒

 8.2. Size:333K  ncepower
nce3008n.pdf pdf_icon

NCE3007S

http //www.ncepower.com NCE3008N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON) ... See More ⇒

Detailed specifications: CS6N70FA9H, SMC3407S, CS6N80A0H, SI9945AEY-T1-E3, SI9945BDY-T1, SI9945DY, CS6N90A8H, NCE2305A, 10N65, MTD6P10ET4, MMSF7P03HDR2G, CS730A8H, SPN3400S23RG, CS730FA9H, CS730FA9RD, CS740A0H, CS120N08A8

Keywords - NCE3007S MOSFET specs

 NCE3007S cross reference

 NCE3007S equivalent finder

 NCE3007S pdf lookup

 NCE3007S substitution

 NCE3007S replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.