Справочник MOSFET. NCE3007S

 

NCE3007S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE3007S
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 16 nC
   trⓘ - Время нарастания: 14 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
   Тип корпуса: SO8

 Аналог (замена) для NCE3007S

 

 

NCE3007S Datasheet (PDF)

 ..1. Size:394K  ncepower
 nce3007s.pdf

NCE3007S NCE3007S

Pb Free Producthttp://www.ncepower.com NCE3007SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features VDS =-30V,ID =-6.5A RDS(ON)

 ..2. Size:803K  cn vbsemi
 nce3007s.pdf

NCE3007S NCE3007S

NCE3007Swww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

 8.1. Size:268K  ncepower
 nce3008m.pdf

NCE3007S NCE3007S

Pb Free Producthttp://www.ncepower.com NCE3008MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic diagram General Feature

 8.2. Size:333K  ncepower
 nce3008n.pdf

NCE3007S NCE3007S

http://www.ncepower.com NCE3008NNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

 8.3. Size:308K  ncepower
 nce3008y.pdf

NCE3007S NCE3007S

http://www.ncepower.com NCE3008YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

 8.4. Size:320K  ncepower
 nce3009s.pdf

NCE3007S NCE3007S

NCE3009Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3009S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =9A Schematic diagram RDS(ON)

 8.5. Size:631K  ncepower
 nce3008xm.pdf

NCE3007S NCE3007S

http://www.ncepower.comNCE3008XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3008XM uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aGBattery protection or in other Switching application.SGeneral Features V = 30V,I = 8A Schematic diagram

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