All MOSFET. CS7N60_A3R Datasheet

 

CS7N60_A3R MOSFET. Datasheet pdf. Equivalent

Type Designator: CS7N60_A3R

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 96 pF

Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm

Package: TO251

CS7N60_A3R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS7N60_A3R Datasheet (PDF)

0.1. cs7n60 a3r.pdf Size:279K _crhj

CS7N60_A3R
CS7N60_A3R

Silicon N-Channel Power MOSFET R ○ CS7N60 A3R General Description: VDSS 600 V CS7N60 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

6.1. cs7n60 a7hd.pdf Size:348K _crhj

CS7N60_A3R
CS7N60_A3R

Silicon N-Channel Power MOSFET R ○ CS7N60 A7HD General Description: VDSS 600 V CS7N60 A7HD, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

6.2. cs7n60 a8hd.pdf Size:352K _crhj

CS7N60_A3R
CS7N60_A3R

Silicon N-Channel Power MOSFET R ○ CS7N60 A8HD General Description: VDSS 600 V CS7N60 A8HD, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 6.3. cs7n60 a4r.pdf Size:286K _crhj

CS7N60_A3R
CS7N60_A3R

Silicon N-Channel Power MOSFET R ○ CS7N60 A4R General Description: VDSS 600 V CS7N60 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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