CS7N60_A3R MOSFET. Datasheet pdf. Equivalent
Type Designator: CS7N60_A3R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 96 pF
Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm
Package: TO251
CS7N60_A3R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS7N60_A3R Datasheet (PDF)
0.1. cs7n60 a3r.pdf 
Size:279K _crhj
Silicon N-Channel Power MOSFET R ○ CS7N60 A3R General Description： VDSS 600 V CS7N60 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
6.1. cs7n60 a7hd.pdf Size:348K _crhj
Silicon N-Channel Power MOSFET R ○ CS7N60 A7HD General Description： VDSS 600 V CS7N60 A7HD, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
6.2. cs7n60 a8hd.pdf Size:352K _crhj
Silicon N-Channel Power MOSFET R ○ CS7N60 A8HD General Description： VDSS 600 V CS7N60 A8HD, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
6.3. cs7n60 a4r.pdf Size:286K _crhj
Silicon N-Channel Power MOSFET R ○ CS7N60 A4R General Description： VDSS 600 V CS7N60 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
