NCE0108AS PDF and Equivalents Search

 

NCE0108AS Specs and Replacement

Type Designator: NCE0108AS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0401 Ohm

Package: SO8

NCE0108AS substitution

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NCE0108AS datasheet

 ..1. Size:433K  ncepower
nce0108as.pdf pdf_icon

NCE0108AS

Pb Free Product NCE0108AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =8A Schematic diagram RDS(ON) ... See More ⇒

 ..2. Size:318K  cn vbsemi
nce0108as.pdf pdf_icon

NCE0108AS

NCE0108AS www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS S... See More ⇒

 8.1. Size:621K  ncepower
nce0102e.pdf pdf_icon

NCE0108AS

NCE0102E http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102E uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I = 2A DS D R ... See More ⇒

 8.2. Size:287K  ncepower
nce0102m.pdf pdf_icon

NCE0108AS

Pb Free Product http //www.ncepower.com NCE0102M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: CS730FA9H, CS730FA9RD, CS740A0H, CS120N08A8, SSC8033GS6, SSC8035GS6, CS7N60A3R, CS7N60A4R, P60NF06, NTF5P03T3G, NTGS3443T1G, NTGS4111PT, CS7N60FA9R, SSM3K335, CS7N65A3R, SQ2348ES-T1, CS7N65A4R

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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