All MOSFET. CS7N80F_A9 Datasheet

 

CS7N80F_A9 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS7N80F_A9

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO220F

CS7N80F_A9 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS7N80F_A9 Datasheet (PDF)

1.1. cs7n80f a9.pdf Size:303K _crhj

CS7N80F_A9
CS7N80F_A9

Silicon N-Channel Power MOSFET R ○ CS7N80F A9 General Description: VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.1. cs7n80f.pdf Size:265K _update_mosfet

CS7N80F_A9
CS7N80F_A9

BRF7N80(CS7N80F) N-Channel MOSFET/N 沟 MOS 晶体管 用途: 用于高效 DC/DC 转换和功率开关 Purpose: These devices are well suited for high efficiency switch mode power supplies. 特点:低的门槛电压、反向传输电容小、开关速度快。 Features: Low gate charge、Low Crss 、Fast switching. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值

 4.1. cs7n80a8.pdf Size:424K _update_mosfet

CS7N80F_A9
CS7N80F_A9

Silicon N-Channel Power MOSFET R ○ CS7N80 A8 General Description: VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25℃) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

4.2. cs7n80 a8.pdf Size:424K _crhj

CS7N80F_A9
CS7N80F_A9

Silicon N-Channel Power MOSFET R ○ CS7N80 A8 General Description: VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25℃) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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