All MOSFET. CS7N80F_A9 Datasheet

 

CS7N80F_A9 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS7N80F_A9

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO220F

CS7N80F_A9 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS7N80F_A9 Datasheet (PDF)

1.1. cs7n80f a9.pdf Size:303K _crhj

CS7N80F_A9
CS7N80F_A9

Silicon N-Channel Power MOSFET R ○ CS7N80F A9 General Description: VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.1. cs7n80f.pdf Size:265K _update_mosfet

CS7N80F_A9
CS7N80F_A9

BRF7N80(CS7N80F) N-Channel MOSFET/N 沟 MOS 晶体管 用途: 用于高效 DC/DC 转换和功率开关 Purpose: These devices are well suited for high efficiency switch mode power supplies. 特点:低的门槛电压、反向传输电容小、开关速度快。 Features: Low gate charge、Low Crss 、Fast switching. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值

 4.1. cs7n80a8.pdf Size:424K _update_mosfet

CS7N80F_A9
CS7N80F_A9

Silicon N-Channel Power MOSFET R ○ CS7N80 A8 General Description: VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25℃) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

4.2. cs7n80 a8.pdf Size:424K _crhj

CS7N80F_A9
CS7N80F_A9

Silicon N-Channel Power MOSFET R ○ CS7N80 A8 General Description: VDSS 800 V CS7N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25℃) 120 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top