Справочник MOSFET. CS7N80FA9

 

CS7N80FA9 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS7N80FA9
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 34 nC
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 115 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для CS7N80FA9

 

 

CS7N80FA9 Datasheet (PDF)

 ..1. Size:303K  wuxi china
 cs7n80fa9.pdf

CS7N80FA9 CS7N80FA9

Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:1165K  jilin sino
 jcs7n80fh jcs7n80ch jcs7n80bh jcs7n80sh.pdf

CS7N80FA9 CS7N80FA9

N RN-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po

 7.2. Size:667K  jilin sino
 jcs7n80fc.pdf

CS7N80FA9 CS7N80FA9

N R N-CHANNEL MOSFET JCS7N80C Package MAIN CHARACTERISTICS 7A ID 800 V VDSS Rdson-max 1.8 @Vgs=10VQg-typ 32nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 7.3. Size:303K  crhj
 cs7n80f a9.pdf

CS7N80FA9 CS7N80FA9

Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.4. Size:265K  foshan
 cs7n80f.pdf

CS7N80FA9 CS7N80FA9

BRF7N80(CS7N80F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switch mode power supplies. : Features: Low gate chargeLow Crss Fast switching. /Absolute maximum ratings(Ta=25)

 7.5. Size:651K  convert
 cs7n80f cs7n80p.pdf

CS7N80FA9 CS7N80FA9

nvertSuzhou Convert Semiconductor Co ., Ltd.CS7N80F, CS7N80P800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N80F TO-220F CS7N80FCS7N8

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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