ST2341S23R PDF and Equivalents Search

 

ST2341S23R Specs and Replacement

Type Designator: ST2341S23R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

ST2341S23R substitution

- MOSFET ⓘ Cross-Reference Search

 

ST2341S23R datasheet

 ..1. Size:906K  cn vbsemi
 st2341s23r.pdf pdf_icon

ST2341S23R

ST2341S23R www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-... See More ⇒

 0.1. Size:602K  stansontech
 st2341s23rg.pdf pdf_icon

ST2341S23R

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho... See More ⇒

 7.1. Size:598K  stansontech
 st2341srg.pdf pdf_icon

ST2341S23R

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and... See More ⇒

 8.1. Size:576K  stansontech
 st2341a.pdf pdf_icon

ST2341S23R

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n... See More ⇒

SHOW MORE

Detailed specifications: CS7N65A4R, STD2NB60T4, CS7N65FA9R, SI4848DY-T1, SI4848DY-T1-E3, SI4850DY-T1, CS7N80FA9, ST2315S23R, RU7088R, STB60N06-14, STC5NF20V, SM4305PSKC, SM4307PSKC-TRG, SQ9945BEY-T1-GE3, SQD40N06-14, SUD50P04-09L-E3, SUD50P06-15L-GE3

Keywords - ST2341S23R MOSFET specs

 ST2341S23R cross reference

 ST2341S23R equivalent finder

 ST2341S23R pdf lookup

 ST2341S23R substitution

 ST2341S23R replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.