ST2341S23R - аналоги и даташиты транзистора

 

ST2341S23R - Даташиты. Аналоги. Основные параметры


   Наименование производителя: ST2341S23R
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для ST2341S23R

   - подбор ⓘ MOSFET транзистора по параметрам

 

ST2341S23R Datasheet (PDF)

 ..1. Size:906K  cn vbsemi
 st2341s23r.pdf pdf_icon

ST2341S23R

ST2341S23Rwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-

 0.1. Size:602K  stansontech
 st2341s23rg.pdf pdf_icon

ST2341S23R

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

 7.1. Size:598K  stansontech
 st2341srg.pdf pdf_icon

ST2341S23R

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and

 8.1. Size:576K  stansontech
 st2341a.pdf pdf_icon

ST2341S23R

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... CS7N65A4R , STD2NB60T4 , CS7N65FA9R , SI4848DY-T1 , SI4848DY-T1-E3 , SI4850DY-T1 , CS7N80FA9 , ST2315S23R , RU7088R , STB60N06-14 , STC5NF20V , SM4305PSKC , SM4307PSKC-TRG , SQ9945BEY-T1-GE3 , SQD40N06-14 , SUD50P04-09L-E3 , SUD50P06-15L-GE3 .

 

 
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