All MOSFET. STB60N06-14 Datasheet

 

STB60N06-14 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB60N06-14
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO263

 STB60N06-14 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB60N06-14 Datasheet (PDF)

 ..1. Size:87K  st
stb60n06-14.pdf

STB60N06-14 STB60N06-14

STB60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTB60N06-14 60 V

 ..2. Size:867K  cn vbsemi
stb60n06-14.pdf

STB60N06-14 STB60N06-14

STB60N06-14www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sou

 7.1. Size:87K  st
stb60n03l-10.pdf

STB60N06-14 STB60N06-14

STB60N03L-10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMIRARY DATATYPE V R IDSS DS(on) DSTB60N03L-10 30 V

 8.1. Size:51K  st
stb60ne03l-12.pdf

STB60N06-14 STB60N06-14

STB60NE03L-12N - CHANNEL 30V - 0.009 - 60A - D2PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATATYPE VDSS RDS(on) IDSTB60NE03L-12 30 V

 8.2. Size:425K  st
stb60nf06.pdf

STB60N06-14 STB60N06-14

STB60NF06N-CHANNEL 60V - 0.014 - 60A D2PAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTB60NF06 60V

 8.3. Size:514K  st
stb60nf06lt4 stb60nf06l stp60nf06l stp60nf06lfp stp60nf06lfp.pdf

STB60N06-14 STB60N06-14

STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V

 8.4. Size:415K  st
stb60nf06-1 stb60nf06t4.pdf

STB60N06-14 STB60N06-14

STB60NF06STB60NF06-1N-channel 60V - 0.014 - 60A - D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06-1 60V

 8.5. Size:446K  st
stb60ne06l-16t4.pdf

STB60N06-14 STB60N06-14

STB60NE06L-16N-channel 60V - 0.014 - 60A - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NE06L-16 60V

 8.6. Size:514K  st
stb60nf06l stp60nf06l stp60nf06lfp.pdf

STB60N06-14 STB60N06-14

STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V

 8.7. Size:568K  st
stb60nh02lt4.pdf

STB60N06-14 STB60N06-14

STB60NH02LN-CHANNEL 24V - 0.0085 - 60A DPAKSTripFET III POWER MOSFETTYPE VDSS RDS(on) IDSTB60NH02L 24 V

 8.8. Size:419K  st
stb60nf06 stb60nf06-1.pdf

STB60N06-14 STB60N06-14

STB60NF06STB60NF06-1N-channel 60V - 0.014 - 60A - D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06-1 60V

 8.9. Size:359K  st
stb60nf10-1 stb60nf10t4.pdf

STB60N06-14 STB60N06-14

STB60NF10STB60NF10-1 - STP60NF10N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAKSTripFET II Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)3312STB60NF10 100V

 8.10. Size:580K  st
stb60nh02l.pdf

STB60N06-14 STB60N06-14

STB60NH02LN-CHANNEL 24V - 0.0085 - 60A DPAKSTripFET III POWER MOSFETTYPE VDSS RDS(on) IDSTB60NH02L 24 V

 8.11. Size:450K  st
stb60ne06l-16.pdf

STB60N06-14 STB60N06-14

STB60NE06L-16N-channel 60V - 0.014 - 60A - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NE06L-16 60V

 8.12. Size:472K  st
stb60nf06l.pdf

STB60N06-14 STB60N06-14

STB60NF06LSTP60NF06L STP60NF06LFPN-CHANNEL 60V - 0.012 - 60A TO-220/TO-220FP/D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB60NF06L 60 V

 8.13. Size:99K  st
stb60ne03l.pdf

STB60N06-14 STB60N06-14

STB60NE03L-10N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(o n) IDSTB60NE03L-10 30 V

 8.14. Size:624K  st
stb60n55f3 std60n55f3 stf60n55f3 sti60n55f3 stu60n55f3 stp60n55f3.pdf

STB60N06-14 STB60N06-14

STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V

 8.15. Size:364K  st
stb60nf10 stb60nf10-1 stp60nf10.pdf

STB60N06-14 STB60N06-14

STB60NF10STB60NF10-1 - STP60NF10N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAKSTripFET II Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)3312STB60NF10 100V

 8.16. Size:1410K  cn vbsemi
stb60nf06.pdf

STB60N06-14 STB60N06-14

STB60NF06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOB4S60L

 

 
Back to Top