All MOSFET. CS8N50FA9R Datasheet

 

CS8N50FA9R Datasheet and Replacement


   Type Designator: CS8N50FA9R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220F
 

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CS8N50FA9R Datasheet (PDF)

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CS8N50FA9R

Silicon N-Channel Power MOSFET R CS8N50F A9R General Description VDSS 500 V CS8N50F A9R, the silicon N-channel Enhanced ID 8 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:270K  crhj
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CS8N50FA9R

Silicon N-Channel Power MOSFET R CS8N50 A8R General Description VDSS 500 V CS8N50 A8R, the silicon N-channel Enhanced ID 8 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: SM4305PSKC , SM4307PSKC-TRG , SQ9945BEY-T1-GE3 , SQD40N06-14 , SUD50P04-09L-E3 , SUD50P06-15L-GE3 , CS8N25FA9 , CS8N50A8R , IRF840 , CS8N60A8D , VB1101M , CS8N60ARD , TP0610K-T1 , TPC8103 , TPC8104 , TK40P04M , CS8N70FA9H2-G .

History: IRFBC30SPBF | IRFH5053 | SSF1020A | ST2301A | VB3222 | CI28N120SM | SI4N60-TN3-R

Keywords - CS8N50FA9R MOSFET datasheet

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