All MOSFET. CS8N50FA9R Datasheet

 

CS8N50FA9R MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS8N50FA9R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220F

 CS8N50FA9R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS8N50FA9R Datasheet (PDF)

 7.1. Size:274K  crhj
 cs8n50f a9r.pdf

CS8N50FA9R CS8N50FA9R

Silicon N-Channel Power MOSFET R CS8N50F A9R General Description VDSS 500 V CS8N50F A9R, the silicon N-channel Enhanced ID 8 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:270K  crhj
 cs8n50 a8r.pdf

CS8N50FA9R CS8N50FA9R

Silicon N-Channel Power MOSFET R CS8N50 A8R General Description VDSS 500 V CS8N50 A8R, the silicon N-channel Enhanced ID 8 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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