All MOSFET. VB162K Datasheet

 

VB162K Datasheet and Replacement


   Type Designator: VB162K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm
   Package: SOT23
 

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VB162K Datasheet (PDF)

 ..1. Size:412K  cn vbsemi
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VB162K

VB162Kwww.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

 0.1. Size:803K  cn vbsemi
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VB162K

VB162KXwww.VBsemi.comN-Channel 60 V(D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition60 0.91 at VGS = 10 V 0.7 100 % Rg and UIS Tested TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/ECDTO-236(SOT-23)G 1G3 DS 2STop ViewN-Channel MOSFET ABSOLUTE MAXIMUM RATIN

Datasheet: TK40P04M , CS8N70FA9H2-G , CS8N80A8D , CS8N80A8H , VB1330 , CS8N80FA9H , CS8N90A8 , CS8N90FA9 , P55NF06 , CS90N03B3 , UT9435G , UTM4052L , UTM6016G , CSZ44V-1 , AO4600 , AO4604 , AO4609 .

History: NCEP01T18 | RU8205G

Keywords - VB162K MOSFET datasheet

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