CS90N03B3 Datasheet and Replacement
Type Designator: CS90N03B3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 521 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO251
CS90N03B3 substitution
CS90N03B3 Datasheet (PDF)
cs90n03b4.pdf

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs90n03 b4.pdf

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs90n03 b3.pdf

Silicon N-Channel Power MOSFET RCS90N03 B3 General Description VDSS 25 V CS90N03 B3, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
Datasheet: CS8N70FA9H2-G , CS8N80A8D , CS8N80A8H , VB1330 , CS8N80FA9H , CS8N90A8 , CS8N90FA9 , VB162K , IRFB4227 , UT9435G , UTM4052L , UTM6016G , CSZ44V-1 , AO4600 , AO4604 , AO4609 , AO4614A .
History: NTMFS5C673NLT1G | MEE6240T
Keywords - CS90N03B3 MOSFET datasheet
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History: NTMFS5C673NLT1G | MEE6240T



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