All MOSFET. CS90N03_B3 Datasheet

 

CS90N03_B3 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS90N03_B3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 80 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 43 nS

Drain-Source Capacitance (Cd): 521 pF

Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm

Package: TO251

CS90N03_B3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS90N03_B3 Datasheet (PDF)

1.1. cs90n03 b4.pdf Size:729K _crhj

CS90N03_B3
CS90N03_B3

Silicon N-Channel Power MOSFET R ○ CS90N03 B4 General Description: VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25℃) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

1.2. cs90n03 b3.pdf Size:726K _crhj

CS90N03_B3
CS90N03_B3

Silicon N-Channel Power MOSFET ○ R CS90N03 B3 General Description: VDSS 25 V CS90N03 B3, the silicon N-channel Enhanced ID 90 A PD(TC=25℃) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 

Datasheet: CS8N70F_A9H2-G , CS8N80_A8D , CS8N80_A8H , CS8N80F_A9D , CS8N80F_A9H , CS8N90_A8 , CS8N90F_A9 , CS8N90F_A9HD , RFP50N06 , CS90N03_B4 , CS9N90_ANHD , CS9N90F_A9D , CSZ44V-1 , AO4600 , AO4604 , AO4609 , AO4614A .

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