UTM6016G MOSFET Datasheet: N-Ch, 60V, 8.1A. Full specification with pinout and replacement list

UTM6016G Specs and Replacement

Type Designator: UTM6016G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SO8

UTM6016G substitution

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UTM6016G datasheet

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UTM6016G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.012 at VGS = 10 V 12.6 60 10.5 nC Optimized for Low Side Synchronous 0.015 at VGS = 4.5 V 11.6 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CC... See More ⇒

0.1. Size:261K utc
utm6016l-ta3-t utm6016g-ta3-t utm6016l-tn3-r utm6016g-tn3-r utm6016g-s08-r utm6016g-k08-5060-r.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UTM6016 Power MOSFET 8.0A, 60V N-CHANNEL FAST SWITCHING MOSFET 1 1 TO-220 DESCRIPTION TO-252 The UTC UTM6016 is an N-Channel MOSFET, it uses UTC s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UTM6016 is suitable for application in networking 1 DC-DC power s... See More ⇒

Detailed specifications: VB1330, CS8N80FA9H, CS8N90A8, CS8N90FA9, VB162K, CS90N03B3, UT9435G, UTM4052L, 2N7000, CSZ44V-1, AO4600, AO4604, AO4609, AO4614A, AO4624, SI4558DY, SI5504DC