All MOSFET. CS9N90F_A9D Datasheet

 

CS9N90F_A9D MOSFET. Datasheet pdf. Equivalent

Type Designator: CS9N90F_A9D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 205 pF

Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm

Package: TO220F

CS9N90F_A9D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS9N90F_A9D Datasheet (PDF)

1.1. cs9n90f a9d.pdf Size:771K _crhj

CS9N90F_A9D
CS9N90F_A9D

Silicon N-Channel Power MOSFET R ○ CS9N90F A9D General Description: VDSS 900 V CS9N90F A9HD the silicon N-channel Enhanced ID 9 A PD(TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

4.1. cs9n90 anhd.pdf Size:785K _crhj

CS9N90F_A9D
CS9N90F_A9D

Silicon N-Channel Power MOSFET R ○ CS9N90 ANHD General Description: VDSS 900 V CS9N90 ANHD, the silicon N-channel Enhanced ID 9 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.95 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 

Datasheet: CS8N80F_A9D , CS8N80F_A9H , CS8N90_A8 , CS8N90F_A9 , CS8N90F_A9HD , CS90N03_B3 , CS90N03_B4 , CS9N90_ANHD , IRFB3306 , CSZ44V-1 , AO4600 , AO4604 , AO4609 , AO4614A , AO4624 , SI4558DY , SI5504DC .

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MOSFET: FQA22P10 | FQA20N40 | FQA19N20L | FQA17P10 | FQA17N40 | FQA16N50 | FQA16N25C | FQA14N30 | FQA13N80 | FQA13N50C | FQA13N50 | FQA12P20 | FQA12N60 | FQA11N90C | FQA11N90 |

 

 

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