AO4614A
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4614A
Marking Code: 4614A
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 6(5)
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.2
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031(0.045)
Ohm
Package:
SOP8
AO4614A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4614A
Datasheet (PDF)
..1. Size:2230K kexin
ao4614a.pdf 
SMD Type MOSFETComplementary Trench MOSFET AO4614A (KO4614A)SOP-8 Unit:mm Features N-Channel : VDS (V) = 40VID = 6 A (VGS = 10V)1.50 0.15RDS(ON) 31m (VGS = 10V)RDS(ON) 45m (VGS = 4.5V)1 S2 5 D1 6 D1 P-Channel : 2 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -5 A (VGS = -10V)RDS(ON) 45m (VGS = -10V)RDS(ON) 63m (VGS = -4.5V)
8.1. Size:217K aosemi
ao4614.pdf
AO461440V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4614 uses advanced trench technology VDS (V) = 40V -40VMOSFETs to provide excellent RDS(ON) and low gateID = 6A (VGS=10V) -5A (VGS = -10V)charge. The complementary MOSFETs may be used inRDS(ON) RDS(ON)H-bridge, Inverters and other applications.
8.2. Size:233K aosemi
ao4614b.pdf
AO4614B40V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4614B uses advanced trench technology VDS (V) = 40V, -40VMOSFETs to provide excellent RDS(ON) and low gateID = 6A (VGS=10V) -5A (VGS=-10V)charge. The complementary MOSFETs may be usedRDS(ON)in H-bridge, Inverters and other applications.
8.3. Size:1597K kexin
ao4614b.pdf
SMD Type MOSFETComplementary Trench MOSFET AO4614B (KO4614B)SOP-8 Unit:mm Features N-Channel : VDS (V) = 40VID = 6 A (VGS = 10V)1.50 0.15RDS(ON) 30m (VGS = 10V)RDS(ON) 38m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -5 A (VGS = -10V)RDS(ON) 45m (VGS = -10V)RDS(ON) 63m (VGS = -4.5V)
8.4. Size:891K cn vbsemi
ao4614-30v.pdf
AO4614&-30Vwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at
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