AO4624 MOSFET Datasheet: NP-Ch, 30V, 6.9(6)A. Full specification with pinout and replacement list

AO4624 Specs and Replacement

Type Designator: AO4624

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.9(6) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028(0.035) Ohm

Package: SOP8

AO4624 substitution

- MOSFET ⓘ Cross-Reference Search

AO4624 datasheet

..1. Size:2869K kexin
ao4624.pdf pdf_icon

SMD Type MOSFET Complementary Trench MOSFET AO4624 (KO4624) SOP-8 Unit mm Features N-Channel VDS (V) = 30V ID = 6.9 A (VGS = 10V) 1.50 0.15 RDS(ON) 28m (VGS = 10V) RDS(ON) 42m (VGS = 4.5V) 1 S2 5 D1 6 D1 P-Channel 2 G2 7 D2 3 S1 VDS (V) = -30V 8 D2 4 G1 ID = -6 A (VGS = -4.5V) RDS(ON) 35m (VGS = -10V) RDS(ON) 58m (VGS = -4.5V) ... See More ⇒

9.1. Size:849K aosemi
ao4629.pdf pdf_icon

AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration is ID= 6A (VGS=10V) -5.5A (VGS=-10V) ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON) ... See More ⇒

9.2. Size:251K aosemi
ao4622.pdf pdf_icon

AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4622 uses advanced trench technology VDS (V) = 20V -20V MOSFETs to provide excellent RDS(ON) and low gate ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V) charge. The complementary MOSFETs may be used RDS(ON) RDS(ON) to form a level shifted high side switch, and for a ... See More ⇒

9.3. Size:301K aosemi
ao4620.pdf pdf_icon

AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology n-channel p-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 30V -30V charge. The complementary MOSFETs may be used ID = 7.2A (VGS=10V) -5.3A (VGS = -10V) in inverter and other applications. RDS(ON) RDS(ON) ... See More ⇒