All MOSFET. AO4624 Datasheet

 

AO4624 MOSFET. Datasheet pdf. Equivalent

Type Designator: AO4624

Marking Code: 4624

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6.9(6) A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.028(0.035) Ohm

Package: SOP8

AO4624 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AO4624 Datasheet (PDF)

1.1. ao4624.pdf Size:2869K _kexin

AO4624
AO4624

SMD Type MOSFET Complementary Trench MOSFET AO4624 (KO4624) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) 1.50 0.15 RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) 1 S2 5 D1 6 D1 ● P-Channel : 2 G2 7 D2 3 S1 VDS (V) = -30V 8 D2 4 G1 ID = -6 A (VGS = -4.5V) RDS(ON) < 35mΩ (VGS = -10V) RDS(ON) < 58mΩ (VGS = -4.5V)

5.1. ao4627.pdf Size:563K _aosemi

AO4624
AO4624

AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration ID= 4.5A (VGS=10V) -3.5A (VGS=-10V) is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON) < 50mΩ (VGS=10V) < 100m

5.2. ao4629.pdf Size:849K _aosemi

AO4624
AO4624

AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration is ID= 6A (VGS=10V) -5.5A (VGS=-10V) ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON) < 30mΩ (VGS=10V) < 41mΩ (VG

5.3. ao4620.pdf Size:301K _aosemi

AO4624
AO4624

AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology n-channel p-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 30V -30V charge. The complementary MOSFETs may be used ID = 7.2A (VGS=10V) -5.3A (VGS = -10V) in inverter and other applications. RDS(ON) RDS(ON) < 24mΩ (VGS=10V) < 32mΩ (

5.4. ao4622.pdf Size:251K _aosemi

AO4624
AO4624

AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4622 uses advanced trench technology VDS (V) = 20V -20V MOSFETs to provide excellent RDS(ON) and low gate ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V) charge. The complementary MOSFETs may be used RDS(ON) RDS(ON) to form a level shifted high side switch, and for a < 23mΩ (VGS=10V) < 53mΩ (VG

5.5. ao4627.pdf Size:3159K _kexin

AO4624
AO4624

SMD Type MOSFET Complementary Trench MOSFET AO4627 (KO4627) SOP-8 Unit:mm ■ Features N-Channel ● VDS (V) = 30V ● ID = 4.5 A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 50mΩ (VGS = 10V) ● RDS(ON) < 68mΩ (VGS = 4.5V) 1 S2 5 D1 P-Channel 2 G2 6 D1 3 S1 7 D2 ● VDS (V) = -30V 4 G1 8 D2 ● ID = -3.5 A (VGS = -10V) ● RDS(ON) < 100mΩ (VGS = -10V) ● RDS(ON)

5.6. ao4629.pdf Size:3043K _kexin

AO4624
AO4624

SMD Type MOSFET Complementary Trench MOSFET AO4629 (KO4629) SOP-8 Unit:mm ■ Features N-Channel ● VDS (V) = 30V ● ID = 6 A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 30mΩ (VGS = 10V) ● RDS(ON) < 42mΩ (VGS = 4.5V) 1 S2 5 D1 P-Channel 6 D1 2 G2 ● VDS (V) = -30V 7 D2 3 S1 8 D2 4 G1 ● ID = -5.5 A (VGS = -10V) ● RDS(ON) < 41mΩ (VGS = -10V) ● RDS(ON)

5.7. ao4620.pdf Size:2318K _kexin

AO4624
AO4624

SMD Type MOSFET Complementary Trench MOSFET AO4620 (KO4620) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 30V ID = 7.2 A (VGS = 10V) 1.50 0.15 RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 36mΩ (VGS = 4.5V) 1 S2 5 D1 6 D1 ● P-Channel : 2 G2 7 D2 3 S1 VDS (V) = -30V 8 D2 4 G1 ID = -5.3 A (VGS = -10V) RDS(ON) < 32mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V)

5.8. ao4622.pdf Size:1949K _kexin

AO4624
AO4624

SMD Type MOSFET Complementary Trench MOSFET AO4622 (KO4622) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) 1.50 0.15 RDS(ON) < 23mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) 1 S1 5 D2 RDS(ON) < 84mΩ (VGS = 2.5V) 6 D2 2 G1 7 D1 3 S2 ● P-Channel : 8 D1 4 G2 VDS (V) = -20V ID = -5 A (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -10V

Datasheet: CS90N03_B4 , CS9N90_ANHD , CS9N90F_A9D , CSZ44V-1 , AO4600 , AO4604 , AO4609 , AO4614A , STF5N52U , SI4558DY , SI5504DC , SI5513CD , SIA517DJ , SI4953ADY , SI1903DL , SI4953DY , AO4824L .

 


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