SI9926DY Specs and Replacement
Type Designator: SI9926DY
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TSSOP8
SI9926DY substitution
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SI9926DY datasheet
si9926dy.pdf
SMD Type MOSFET SMD Type Dual N-Channel MOSFET SI9926DY (KI9926DY) TSSOP-8 Unit mm Features RDS(on) 0.032 @ VGS = 4.5 V 6.45+0.1 -0.1 4.45+0.1 -0.1 RDS(on) 0.045 @ VGS = 2.5 V. 1 Drain1 5 Gate2 2 Source 6 Source2 1 D1 D2 1 3 Source 7 Source2 S1 S2 4 Gate1 8 Drain2 S1 S2 G1 G2 Absolute Maximum Ratings Ta = 25 Parameter ... See More ⇒
si9926dy-hf-s.pdf
SMD Type MOSFET Dual N-Channel MOSFET SI9926DY-HF (KI9926DY-HF) SOP-8 Features VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 30m (VGS = 4.5V) 1.50 0.15 RDS(ON) 43m (VGS = 2.5V) Low gate charge 1 Source 5 Drain Pb-Free Package May be Available. The G-Suffix Denotes a 6 Drain 2 Gate 7 Drain 3 Source Pb-Free Lead Finish 8 Drain 4 Gat... See More ⇒
si9926dy-s.pdf
SMD Type MOSFET Dual N-Channel MOSFET SI9926DY (KI9926DY) SOP-8 Features VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 30m (VGS = 4.5V) 1.50 0.15 RDS(ON) 43m (VGS = 2.5V) Low gate charge 1 Source 5 Drain 6 Drain 2 Gate 7 Drain 3 Source 8 Drain 4 Gate 5 4 Q1 6 3 7 2 Q2 8 1 Absolute Maximum Ratings Ta = 25 Parameter Symbol R... See More ⇒
Detailed specifications: KI8205A, KI8205T, KI8810DY, KI8810T, KI9926A, KX4N03W, SI4946DY, SI9926BDY, IRF530, 2SJ130S, 2SJ213, 2SJ302-ZJ, 2SJ356, 2SJ492-ZJ, 2SJ599-Z, 2SJ600-Z, 2SJ602-ZJ
Keywords - SI9926DY MOSFET specs
SI9926DY cross reference
SI9926DY equivalent finder
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