SI9926DY Datasheet and Replacement
Type Designator: SI9926DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TSSOP8
SI9926DY substitution
SI9926DY Datasheet (PDF)
si9926dy.pdf

SMD Type MOSFETSMD TypeDual N-Channel MOSFETSI9926DY (KI9926DY)TSSOP-8Unit: mm Features RDS(on) 0.032 @ VGS = 4.5 V6.45+0.1-0.14.45+0.1-0.1 RDS(on) 0.045 @ VGS = 2.5 V.1 : Drain1 5 : Gate22 : Source 6 : Source21D1D213 : Source 7 : Source2S1S24 : Gate1 8 : Drain2S1 S2G1G2 Absolute Maximum Ratings Ta = 25Parameter
si9926dy-hf-s.pdf

SMD Type MOSFETDual N-Channel MOSFETSI9926DY-HF (KI9926DY-HF)SOP-8 Features VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 30m (VGS = 4.5V)1.50 0.15 RDS(ON) 43m (VGS = 2.5V) Low gate charge1 Source 5 Drain Pb-Free Package May be Available. The G-Suffix Denotes a6 Drain2 Gate7 Drain3 SourcePb-Free Lead Finish8 Drain4 Gat
si9926dy-s.pdf

SMD Type MOSFETDual N-Channel MOSFETSI9926DY (KI9926DY)SOP-8 Features VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 30m (VGS = 4.5V)1.50 0.15 RDS(ON) 43m (VGS = 2.5V) Low gate charge1 Source 5 Drain6 Drain2 Gate7 Drain3 Source8 Drain4 Gate5 4Q16 37 2Q28 1 Absolute Maximum Ratings Ta = 25Parameter Symbol R
Datasheet: KI8205A , KI8205T , KI8810DY , KI8810T , KI9926A , KX4N03W , SI4946DY , SI9926BDY , AO4407 , 2SJ130S , 2SJ213 , 2SJ302-ZJ , 2SJ356 , 2SJ492-ZJ , 2SJ599-Z , 2SJ600-Z , 2SJ602-ZJ .
Keywords - SI9926DY MOSFET datasheet
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History: CS10N80F | CS2N60A4H



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