SI2303BDS Datasheet and Replacement

Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)b Pb-free 0.200 at VGS = - 10 V Available - 1.64 - 30 0.380 at VGS = - 4.5 V RoHS* - 1.0 COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303BDS (L3)* * Marking Code Ordering Information Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-... See More ⇒

SMD Type MOSFET P-Channel Enhancement MOSFET SI2303BDS (KI2303BDS) Features SOT-23 Unit mm +0.1 VDS (V) =-30V 2.9 -0.1 +0.1 0.4 -0.1 RDS(ON) 200m (VGS =-10V) 3 RDS(ON) 380m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 G 1 3 D 1.Gate S 2 2.Source 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady... See More ⇒

SMD Type MOSFET P-Channel Enhancement MOSFET SI2303BDS (KI2303BDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 Features 0.4 -0.1 3 VDS (V) =-30V RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 G 1 1.9-0.2 3 D S 2 1.Gate 2.Source 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec St... See More ⇒

Si2303CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.190 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET - 30 2 nC 100 % Rg Tested 0.330 at VGS = - 4.5 V - 2.1 100 % UIS Tested APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D ... See More ⇒

Si2303DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 1.7 30 30 0.460 @ VGS = 4.5 V 1.3 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-Source Volta... See More ⇒

Si2303CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.190 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET - 30 2 nC 100 % Rg Tested 0.330 at VGS = - 4.5 V - 2.1 100 % UIS Tested APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D ... See More ⇒

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2303 P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b 0.240 @ VGS = 10 V 1.4 30 0.460 @ VGS = 4.5 V 1.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303DS (A3T)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source V... See More ⇒

SMD Type MOSFET P-Channel Enhancement MOSFET SI2303DS (KI2303DS) SOT-23-3 Unit mm +0.2 2.9-0.1 Features +0.1 0.4 -0.1 VDS (V) =-30V 3 RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin... See More ⇒

SMD Type MOSFET P-Channel Enhancement MOSFET SI2303DS (KI2303DS) Features SOT-23 Unit mm +0.1 VDS (V) =-30V 2.9 -0.1 +0.1 0.4-0.1 RDS(ON) 200m (VGS =-10V) 3 RDS(ON) 380m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 3 D 1.Gate 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒

SMD Type MOSFET P-Channel Enhancement MOSFET SI2303 (KI2303) SOT-23-3 Unit mm +0.2 2.9-0.1 Features +0.1 0.4 -0.1 VDS (V) =-30V 3 RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un... See More ⇒

R UMW UMW SI2303 SOT-23 Plastic-Encapsulate MOSFETS P-channel 30-V(D-S) MOSFET SI2303 V(BR)DSS RDS(on)MAX ID 190m @-10V -30 V -1.7A 330m @-4.5V FEATURE TrenchFET Power MOSFET SOT 23 APPLICATION Load Switch for Portable Devices DC/DC Converter 1. GATE MARKING Equivalent Circuit 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 unless otherwise noted) Parame... See More ⇒

SOT-23 Plastic-Encapsulate MOSFETS SI2303 P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY SOT-23 VDS (V) rDS(on) (W) ID (A)b 0.240 @ VGS = 10 V 1.4 30 3 0.460 @ VGS = 4.5 V 1.0 1.GATE 2.SOURCE 3.DRAIN General FEATURE 1 2 TrenchFET Power MOSFET Lead free product is acquired MARKING Equivalent Circuit Surface mount package APPLICATION A96TF w Load Switc... See More ⇒