SI3437DV
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI3437DV
Marking Code: AH*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.4
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 30
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75
Ohm
Package: SOT163
SI3437DV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI3437DV
Datasheet (PDF)
..1. Size:196K vishay
si3437dv.pdf 
Si3437DVVishay SiliconixP-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.75 at VGS = - 10 V - 1.4 TrenchFET Power MOSFET- 150 8 nC 100 % Rg and UIS Tested 0.79 at VGS = - 6 V - 1.3 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Active Clamp Circu
..2. Size:2060K kexin
si3437dv.pdf
SMD Type MOSFETP-Channel MOSFETSI3437DV (KI3437DV)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features 6 5 4 VDS (V) =-150V ID =-1.4 A (VGS =-10V) RDS(ON) 750m (VGS =-10V)S1 2 3+0.02 RDS(ON) 790m (VGS =-6V)0.15 -0.02+0.01-0.01+0.2-0.1G1. Drain 2. Drain3.Gate4. Source 5. DrainD 6. Drain Absolute Maximum Ratings Ta = 25
9.1. Size:180K vishay
si3434dv.pdf
Si3434DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.034 at VGS = 4.5 V 6.1 TrenchFET Power MOSFET300.050 at VGS = 2.5 V 5.0 2.5 V Rating for 30 V N-Channel Low RDS(on) for Footprint Area Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
9.2. Size:205K vishay
si3433cd.pdf
New ProductSi3433CDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.038 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET0.046 at VGS = - 2.5 V - 6 18 nC- 20APPLICATIONS0.060 at VGS = - 1.8 V - 6 Load Switch NotebookTSOP-6(4) STop View
9.3. Size:206K vishay
si3433cdv.pdf
New ProductSi3433CDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.038 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET0.046 at VGS = - 2.5 V - 6 18 nC- 20APPLICATIONS0.060 at VGS = - 1.8 V - 6 Load Switch NotebookTSOP-6(4) STop View
9.4. Size:461K vishay
si3434.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components CA 91311SI3434Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel High dense cell design for extremely low RDS(ON) Rugged and reliableEnhancement Mode Lead free product is acquired SOT-23 PackageField Effect Transistor Marking Code: R34 Epoxy me
9.5. Size:208K vishay
si3438dv.pdf
New ProductSi3438DVVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0355 at VGS = 10 V 7.4 TrenchFET Power MOSFET40 5.3 nC Compliant to RoHS Directive 2002/95/EC0.0425 at VGS = 4.5 V 6.7APPLICATIONS DC/DC ConverterTSOP-6 Top View D D
9.6. Size:85K vishay
si3435dv.pdf
Si3435DVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.036 at VGS = - 4.5 V - 6.3 TrenchFET Power MOSFETs0.050 at VGS = - 2.5 V - 12 - 5.3 1.8 V Rated 0.073 at VGS = - 1.8 V - 4.4 Compliant to RoHS Directive 2002/95/ECTSOP-6(4) STop View1 6
9.7. Size:175K vishay
si3430dv.pdf
Si3430DVVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.170 at VGS = 10 V 2.4 High-Efficiency PWM Optimized1000.185 at VGS = 6.0 V 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 4
9.8. Size:49K vishay
si3433.pdf
Si3433New ProductVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.042 @ VGS = -4.5 V-5.6-20 0.057 @ VGS = - 2.5 V -4.80.080 @ VGS = - 1.8 V -4.1(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 secs Steady State
9.9. Size:184K vishay
si3433bdv.pdf
Si3433BDVVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 4.5 V - 5.6 TrenchFET Power MOSFETs: 1.8 V Rated0.057 at VGS = - 2.5 V - 20 - 4.8 Compliant to RoHS Directive 2002/95/EC0.080 at VGS = - 1.8 V - 4.1TSOP-6Top View(4) S1 63 mm
9.10. Size:863K cn vbsemi
si3430dv.pdf
SI3430DVwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS
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