SI3437DV Datasheet. Specs and Replacement

Type Designator: SI3437DV  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: SOT163

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SI3437DV datasheet

 ..1. Size:196K  vishay
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SI3437DV

Si3437DV Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.75 at VGS = - 10 V - 1.4 TrenchFET Power MOSFET - 150 8 nC 100 % Rg and UIS Tested 0.79 at VGS = - 6 V - 1.3 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Active Clamp Circu... See More ⇒

 ..2. Size:2060K  kexin
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SI3437DV

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 9.1. Size:180K  vishay
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SI3437DV

Si3434DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.034 at VGS = 4.5 V 6.1 TrenchFET Power MOSFET 30 0.050 at VGS = 2.5 V 5.0 2.5 V Rating for 30 V N-Channel Low RDS(on) for Footprint Area Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒

 9.2. Size:205K  vishay
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SI3437DV

New Product Si3433CDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.038 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET 0.046 at VGS = - 2.5 V - 6 18 nC - 20 APPLICATIONS 0.060 at VGS = - 1.8 V - 6 Load Switch Notebook TSOP-6 (4) S Top View ... See More ⇒

Detailed specifications: SI2335DS, SI2337DS, SI2341DS, SI2343DS, SI2345DS, SI2369DS, SI2377EDS, SI2399DS, AO3400, SI3475DV, SI4463BDY, SI7119DN, SI7129DN, SI9435BDY, SI9435DY, SIS2305PLT1G, XP162A11

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