SIS2305PLT1G Specs and Replacement
Type Designator: SIS2305PLT1G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 375 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: SOT23
SIS2305PLT1G substitution
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SIS2305PLT1G datasheet
sis2305plt1g.pdf
SMD Type MOSFET SMD Type P-Channel MOSFET SIS2305PLT1G SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = -8V RDS(ON) 0.052 (VGS = -4.5V) 1 2 RDS(ON) 0.071 (VGS = -2.5V) D +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 0.108 (VGS = -1.8V) +0.1 1.9 -0.1 1. Gate 2. Source G 3. Drain S Absolute Maximum Ratings Ta = 25 Para... See More ⇒
Detailed specifications: SI2399DS, SI3437DV, SI3475DV, SI4463BDY, SI7119DN, SI7129DN, SI9435BDY, SI9435DY, 2SK3878, XP162A11, 2N7002TE, 2SK1284-Z, 2SK2094-Z, 2SK2869-ZJ, 2SK2926-ZJ, 2SK3024-Z, 2SK3224-Z
Keywords - SIS2305PLT1G MOSFET specs
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