All MOSFET. SIS2305PLT1G Datasheet

 

SIS2305PLT1G Datasheet and Replacement


   Type Designator: SIS2305PLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: SOT23
 

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SIS2305PLT1G Datasheet (PDF)

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SIS2305PLT1G

SMD Type MOSFETSMD TypeP-Channel MOSFETSIS2305PLT1G SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = -8V RDS(ON)0.052 (VGS = -4.5V)1 2 RDS(ON)0.071 (VGS = -2.5V)D +0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON)0.108 (VGS = -1.8V) +0.11.9 -0.11. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Para

Datasheet: SI2399DS , SI3437DV , SI3475DV , SI4463BDY , SI7119DN , SI7129DN , SI9435BDY , SI9435DY , IRFP260 , XP162A11 , 2N7002TE , 2SK1284-Z , 2SK2094-Z , 2SK2869-ZJ , 2SK2926-ZJ , 2SK3024-Z , 2SK3224-Z .

History: MC6414 | 4N90G-T3N-T | IRFPE30 | SI9424DY-T1-E3 | SI4058DY | FHF7N65A | STD110N8F6

Keywords - SIS2305PLT1G MOSFET datasheet

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