SIS2305PLT1G Datasheet and Replacement
Type Designator: SIS2305PLT1G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 375 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: SOT23
SIS2305PLT1G substitution
SIS2305PLT1G Datasheet (PDF)
sis2305plt1g.pdf
SMD Type MOSFETSMD TypeP-Channel MOSFETSIS2305PLT1G SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = -8V RDS(ON)0.052 (VGS = -4.5V)1 2 RDS(ON)0.071 (VGS = -2.5V)D +0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON)0.108 (VGS = -1.8V) +0.11.9 -0.11. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Para
Datasheet: SI2399DS , SI3437DV , SI3475DV , SI4463BDY , SI7119DN , SI7129DN , SI9435BDY , SI9435DY , 8205A , XP162A11 , 2N7002TE , 2SK1284-Z , 2SK2094-Z , 2SK2869-ZJ , 2SK2926-ZJ , 2SK3024-Z , 2SK3224-Z .
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