2SK1284-Z PDF and Equivalents Search

 

2SK1284-Z Specs and Replacement

Type Designator: 2SK1284-Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: TO252

2SK1284-Z substitution

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2SK1284-Z datasheet

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2SK1284-Z

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2SK1284-Z

SMD Type IC SMD Type MOSFET N-Channel MOSFET 2SK1284-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 Low on-state resistance RDS(on) 0.32 .@VGS=10V,ID=2A RDS(on) 0.40 @VGS=4V,ID=2A 0.127 +0.1 0.80-0.1 max Low Ciss Ciss=500pF TYP. Built-in G-S Gate Protection Diode + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Drain 3 Source A... See More ⇒

 8.1. Size:288K  nec
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2SK1284-Z

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit mm) DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or 8.5 MAX. solenoid, motor and lamp driver. 3.2 0.2 2.8 MAX. FEATURES Low on-state resistance RDS(on) = 0.18 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.24 MAX. (VGS = 4 V, ID = 2 ... See More ⇒

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Detailed specifications: SI4463BDY, SI7119DN, SI7129DN, SI9435BDY, SI9435DY, SIS2305PLT1G, XP162A11, 2N7002TE, IRF9540N, 2SK2094-Z, 2SK2869-ZJ, 2SK2926-ZJ, 2SK3024-Z, 2SK3224-Z, 2SK3225, 2SK3269-ZJ, 2SK3305-ZJ

Keywords - 2SK1284-Z MOSFET specs

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