AO4406
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4406
Marking Code: 4406
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 11.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 201
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115
Ohm
Package:
SOP8
AO4406
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4406
Datasheet (PDF)
..1. Size:1498K kexin
ao4406.pdf
SMD Type MOSFETN-Channel MOSFETAO4406 (KO4406)SOP-8 Features VDS (V) = 30VD ID = 11.5 A (VGS = 10V)1.50 0.15 RDS(ON) 14m (VGS = 10V) RDS(ON) 16.5m (VGS = 4.5V)1 Source 5 Drain6 Drain RDS(ON) 26m (VGS = 2.5V) 2 Source7 Drain3 SourceG8 Drain4 GateS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
..2. Size:833K cn vbsemi
ao4406.pdf
AO4406www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8
0.1. Size:328K aosemi
ao4406a.pdf
AO4406A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4406A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 13AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
0.2. Size:1723K kexin
ao4406a.pdf
SMD Type MOSFETN-Channel MOSFETAO4406A (KO4406A)SOP-8 Features VDS (V) = 30V ID = 13 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V)1.50 0.15 RDS(ON) 15.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V
0.3. Size:833K cn vbsemi
ao4406a.pdf
AO4406Awww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-
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