KI8810DS Specs and Replacement
Type Designator: KI8810DS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 320 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOT23
KI8810DS substitution
- MOSFET ⓘ Cross-Reference Search
KI8810DS datasheet
ki8810ds.pdf
SMD Type MOSFET N-Channel MOSFET KI8810DS SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 20V ID = 6 A 1 2 RDS(ON) 22m (VGS = 4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 30m (VGS = 2.5V) D ESD protected G 1. Gate 2. Source 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symbol R... See More ⇒
ki8810dy.pdf
SMD Type MOSFET Dual N-Channel MOSFET KI8810DY SOP-8 Features VDS (V) = 20V ID = 7 A 1.50 0.15 RDS(ON) 20m (VGS = 4.5V) RDS(ON) 30m (VGS = 2.5V) RDS(ON) 50m (VGS = 1.8V) ESD Rating 2KV HBM D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5 Top View S2 S1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin... See More ⇒
ki8810t.pdf
SMD Type MOSFET Dual N-Channel MOSFET KI8810T ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 20V ID = 7 A RDS(ON) 20m (VGS = 4.5V) 2 3 1 RDS(ON) 30m (VGS = 2.5V) +0.02 0.15 -0.02 +0.01 -0.01 RDS(ON) 50m (VGS = 1.8V) +0.2 -0.1 ESD Rating 2KV HBM D1 D2 S1 1 6 G1 G1 G2 D1/D2 2 5 D1/D2 S2 3 4 G2 S2 S1 ... See More ⇒
Detailed specifications: KI1N60DS, KI2310, KI2310DS, KI3055, KI3055DY, KI3305DS, KI502DT, KI7N10DY, P60NF06, KO3400, KX10N60F, KX120N06, KX12N65F, KX1N60DS, KX3N80, KX4N60F, KX6N70
Keywords - KI8810DS MOSFET specs
KI8810DS cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: KI1N60
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