KI8810DS Datasheet and Replacement
Type Designator: KI8810DS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 320 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOT23
KI8810DS substitution
KI8810DS Datasheet (PDF)
ki8810ds.pdf

SMD Type MOSFETN-Channel MOSFETKI8810DSSOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 6 A1 2 RDS(ON) 22m (VGS = 4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 30m (VGS = 2.5V) D ESD protectedG1. Gate2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol R
ki8810dy.pdf

SMD Type MOSFETDual N-Channel MOSFETKI8810DYSOP-8 Features VDS (V) = 20V ID = 7 A1.50 0.15 RDS(ON) 20m (VGS = 4.5V) RDS(ON) 30m (VGS = 2.5V) RDS(ON) 50m (VGS = 1.8V) ESD Rating: 2KV HBMD1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25Top ViewS2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin
ki8810t.pdf

SMD Type MOSFETDual N-Channel MOSFETKI8810T( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 20V ID = 7 A RDS(ON) 20m (VGS = 4.5V)2 31 RDS(ON) 30m (VGS = 2.5V)+0.020.15 -0.02+0.01-0.01 RDS(ON) 50m (VGS = 1.8V)+0.2-0.1 ESD Rating: 2KV HBMD1 D2S1 1 6 G1G1 G2 D1/D2 2 5 D1/D2S2 3 4 G2S2S1
Datasheet: KI1N60DS , KI2310 , KI2310DS , KI3055 , KI3055DY , KI3305DS , KI502DT , KI7N10DY , AO3401 , KO3400 , KX10N60F , KX120N06 , KX12N65F , KX1N60DS , KX3N80 , KX4N60F , KX6N70 .
History: SFW280N600C4 | NCE1520KA | STP6N95K5 | FCD1300N80Z
Keywords - KI8810DS MOSFET datasheet
KI8810DS cross reference
KI8810DS equivalent finder
KI8810DS lookup
KI8810DS substitution
KI8810DS replacement
History: SFW280N600C4 | NCE1520KA | STP6N95K5 | FCD1300N80Z



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