KX6N70F Specs and Replacement
Type Designator: KX6N70F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO220F
KX6N70F substitution
- MOSFET ⓘ Cross-Reference Search
KX6N70F datasheet
kx6n70f.pdf
DIP Type MOSFET N-Channel Enhancement MOSFET KX6N70F Unit mm TO-220F 0.20 0.20 0.20 2.54 Features 0.20 0.70 VDS (V) = 700V ID = 6.0A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC) 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 2.54typ 2.54typ Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒
kx6n70.pdf
DIP Type MOSFET N-Channel Enhancement MOSFET KX6N70 TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features VDS (V) = 700V ID = 6.0A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC) D 1.27 0.10 1.52 0.10 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54TYP [2.54 0.20] [2.54 0.20] G ... See More ⇒
Detailed specifications: KO3400, KX10N60F, KX120N06, KX12N65F, KX1N60DS, KX3N80, KX4N60F, KX6N70, IRF830, KX6N80F, KX8N60C, KX8N60CF, KX8N60F, KX90N06, KXF3055, MCH6405, NDT06N03
Keywords - KX6N70F MOSFET specs
KX6N70F cross reference
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