KX8N60C Datasheet and Replacement
Type Designator: KX8N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220
KX8N60C substitution
KX8N60C Datasheet (PDF)
kx8n60c.pdf

DIP Type MOSFETN-Channel MOSFETKX8N60CTO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 600V ID = 7.5 A (VGS = 10V) RDS(ON) 1.2 (VGS = 10V)D Fast switching1.27 0.10 1.52 0.1021 3 Improved dv/dt capability0.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.
kx8n60cf.pdf

DIP Type MOSFETN-Channel MOSFETKX8N60CFUnit: mmTO-220F0.200.200.202.540.200.70 Features VDS (V) = 600V ID = 7.5 A (VGS = 10V) RDS(ON) 1.2 (VGS = 10V)D 0.20 Fast switching 2.76 Improved dv/dt capability1.47max0.200.501 2 3 G0.200.802.54typS2.54typ Absolute Maximum Ratings Ta = 25Parameter
kx8n60f.pdf

DIP Type MOSFETN-Channel MOSFET KX8N60FUnit: mmTO-220F0.200.200.202.540.200.70 Features VDS (V) = 600V ID = 7.5 A (VGS = 10V) RDS(ON) 1.2 (VGS = 10V)0.202.76 Low gate charge 100% avalanche tested1.47max0.200.500.200.802.54typ2.54typ Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
Datasheet: KX120N06 , KX12N65F , KX1N60DS , KX3N80 , KX4N60F , KX6N70 , KX6N70F , KX6N80F , AON7403 , KX8N60CF , KX8N60F , KX90N06 , KXF3055 , MCH6405 , NDT06N03 , NDT110N03 , NDT15N10 .
History: CS4N65FA9HD
Keywords - KX8N60C MOSFET datasheet
KX8N60C cross reference
KX8N60C equivalent finder
KX8N60C lookup
KX8N60C substitution
KX8N60C replacement
History: CS4N65FA9HD



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