All MOSFET. KX8N60F Datasheet

 

KX8N60F Datasheet and Replacement


   Type Designator: KX8N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F
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KX8N60F Datasheet (PDF)

 ..1. Size:2119K  kexin
kx8n60f.pdf pdf_icon

KX8N60F

DIP Type MOSFETN-Channel MOSFET KX8N60FUnit: mmTO-220F0.200.200.202.540.200.70 Features VDS (V) = 600V ID = 7.5 A (VGS = 10V) RDS(ON) 1.2 (VGS = 10V)0.202.76 Low gate charge 100% avalanche tested1.47max0.200.500.200.802.54typ2.54typ Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

 8.1. Size:3240K  kexin
kx8n60cf.pdf pdf_icon

KX8N60F

DIP Type MOSFETN-Channel MOSFETKX8N60CFUnit: mmTO-220F0.200.200.202.540.200.70 Features VDS (V) = 600V ID = 7.5 A (VGS = 10V) RDS(ON) 1.2 (VGS = 10V)D 0.20 Fast switching 2.76 Improved dv/dt capability1.47max0.200.501 2 3 G0.200.802.54typS2.54typ Absolute Maximum Ratings Ta = 25Parameter

 8.2. Size:2504K  kexin
kx8n60c.pdf pdf_icon

KX8N60F

DIP Type MOSFETN-Channel MOSFETKX8N60CTO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 600V ID = 7.5 A (VGS = 10V) RDS(ON) 1.2 (VGS = 10V)D Fast switching1.27 0.10 1.52 0.1021 3 Improved dv/dt capability0.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

Keywords - KX8N60F MOSFET datasheet

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