NDT2N60 Datasheet and Replacement
Type Designator: NDT2N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 31 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO252
NDT2N60 substitution
NDT2N60 Datasheet (PDF)
ndt2n60.pdf

SMD Type MOSFETN-Channel MOSFETNDT2N60TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) = 600V ID = 2 A (VGS = 10V) RDS(ON) 4.5 (VGS = 10V)0.127+0.10.80-0.1max Low Gate Charge Low Reverse transfer capacitances1 Gate2.3 0.60+ 0.1- 0.12 Drain+0.154.60 -0.15 3 Source4 Drain
ndt2n60p.pdf

DIP Type MOSFETN-Channel MOSFETNDT2N60PUnit:mmTO-2516.500.152.300.105.300.100.58 (max)0.43 (min) Features VDS (V) = 600V ID = 2 A (VGS = 10V) RDS(ON) 4.5 (VGS = 10V) 1 2 3 Low Gate Charge0.800.10 Low Reverse transfer capacitances0.600.100.58 (max)2.30(typ)0.43 (min)4.600.101.200.15 Absolute Maximum Ratin
Datasheet: KXF3055 , MCH6405 , NDT06N03 , NDT110N03 , NDT15N10 , NDT18N06 , NDT1N70 , NDT25N06 , BS170 , NDT2N60P , NDT35N06 , NDT4N20L , NDT4N60 , NDT4N65 , NDT4N65P , NDT4N70 , NDT50N03 .
History: FHP540C | NTTFS4C10N | STI60N55F3 | NP60N04MUG | IRFB7446PBF | HSBA3058 | SNN4010D
Keywords - NDT2N60 MOSFET datasheet
NDT2N60 cross reference
NDT2N60 equivalent finder
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History: FHP540C | NTTFS4C10N | STI60N55F3 | NP60N04MUG | IRFB7446PBF | HSBA3058 | SNN4010D



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