NDT2N60 PDF and Equivalents Search

 

NDT2N60 Specs and Replacement

Type Designator: NDT2N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO252

NDT2N60 substitution

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NDT2N60 datasheet

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NDT2N60

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NDT2N60

DIP Type MOSFET N-Channel MOSFET NDT2N60P Unit mm TO-251 6.50 0.15 2.30 0.10 5.30 0.10 0.58 (max) 0.43 (min) Features VDS (V) = 600V ID = 2 A (VGS = 10V) RDS(ON) 4.5 (VGS = 10V) 1 2 3 Low Gate Charge 0.80 0.10 Low Reverse transfer capacitances 0.60 0.10 0.58 (max) 2.30(typ) 0.43 (min) 4.60 0.10 1.20 0.15 Absolute Maximum Ratin... See More ⇒

Detailed specifications: KXF3055, MCH6405, NDT06N03, NDT110N03, NDT15N10, NDT18N06, NDT1N70, NDT25N06, IRF730, NDT2N60P, NDT35N06, NDT4N20L, NDT4N60, NDT4N65, NDT4N65P, NDT4N70, NDT50N03

Keywords - NDT2N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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