NDT2N60 Specs and Replacement
Type Designator: NDT2N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 31 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO252
NDT2N60 substitution
- MOSFET ⓘ Cross-Reference Search
NDT2N60 datasheet
ndt2n60p.pdf
DIP Type MOSFET N-Channel MOSFET NDT2N60P Unit mm TO-251 6.50 0.15 2.30 0.10 5.30 0.10 0.58 (max) 0.43 (min) Features VDS (V) = 600V ID = 2 A (VGS = 10V) RDS(ON) 4.5 (VGS = 10V) 1 2 3 Low Gate Charge 0.80 0.10 Low Reverse transfer capacitances 0.60 0.10 0.58 (max) 2.30(typ) 0.43 (min) 4.60 0.10 1.20 0.15 Absolute Maximum Ratin... See More ⇒
Detailed specifications: KXF3055, MCH6405, NDT06N03, NDT110N03, NDT15N10, NDT18N06, NDT1N70, NDT25N06, IRF730, NDT2N60P, NDT35N06, NDT4N20L, NDT4N60, NDT4N65, NDT4N65P, NDT4N70, NDT50N03
Keywords - NDT2N60 MOSFET specs
NDT2N60 cross reference
NDT2N60 equivalent finder
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AON6324 | 3N75 | BR40P03 | PHB32N06 | SMP40N10 | 2SK388 | 60NM60L-T47
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