All MOSFET. NDT2N60 Datasheet

 

NDT2N60 Datasheet and Replacement


   Type Designator: NDT2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO252
 

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NDT2N60 Datasheet (PDF)

 ..1. Size:1627K  kexin
 ndt2n60.pdf pdf_icon

NDT2N60

SMD Type MOSFETN-Channel MOSFETNDT2N60TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) = 600V ID = 2 A (VGS = 10V) RDS(ON) 4.5 (VGS = 10V)0.127+0.10.80-0.1max Low Gate Charge Low Reverse transfer capacitances1 Gate2.3 0.60+ 0.1- 0.12 Drain+0.154.60 -0.15 3 Source4 Drain

 0.1. Size:1619K  kexin
 ndt2n60p.pdf pdf_icon

NDT2N60

DIP Type MOSFETN-Channel MOSFETNDT2N60PUnit:mmTO-2516.500.152.300.105.300.100.58 (max)0.43 (min) Features VDS (V) = 600V ID = 2 A (VGS = 10V) RDS(ON) 4.5 (VGS = 10V) 1 2 3 Low Gate Charge0.800.10 Low Reverse transfer capacitances0.600.100.58 (max)2.30(typ)0.43 (min)4.600.101.200.15 Absolute Maximum Ratin

Datasheet: KXF3055 , MCH6405 , NDT06N03 , NDT110N03 , NDT15N10 , NDT18N06 , NDT1N70 , NDT25N06 , IRFP064N , NDT2N60P , NDT35N06 , NDT4N20L , NDT4N60 , NDT4N65 , NDT4N65P , NDT4N70 , NDT50N03 .

History: IRLML2803PBF-1

Keywords - NDT2N60 MOSFET datasheet

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