NDT4N20L Datasheet. Specs and Replacement

Type Designator: NDT4N20L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT223

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NDT4N20L datasheet

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NDT4N20L

SMD Type MOSFET N-Channel MOSFET NDT4N20L Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 VDS (V) = 200V ID = 1 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) RDS(ON) 1.55 (VGS = 5V) 1 2 3 Low gate charge 0.250 2.30 (typ) Gauge Plane 1.Gate 2.Drain 0.70 0.1 3.Source 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 Parameter Sy... See More ⇒

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 ndt4n65.pdf pdf_icon

NDT4N20L

SMD Type MOSFET N-Channel Enhancement MOSFET NDT4N65 (KDT4N65) Features TO-252 Unit mm VDS (V) = 650V +0.15 6.50 -0.15 +0.1 2.30 -0.1 ID = 3.0 A (VGS = 10V) +0.2 5.30 -0.2 +0.8 0.50 -0.7 RDS(ON) 3 (VGS = 10V) D 0.127 +0.1 0.80 -0.1 max G +0.1 1 GATE 2.3 0.60-0.1 S +0.15 4.60 -0.15 2 DRAIN 3 SOURCE Absolute Maximum Ratings Ta = 25 P... See More ⇒

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NDT4N20L

SMD Type MOSFET N-Channel Enhancement MOSFET NDT4N70 TO-252 Unit mm Features + 0.15 6.50- 0.15 + 0.1 2.30- 0.1 + 0.2 5.30- 0.2 +0.8 0.50 -0.7 VDS (V) = 700V ID = 4.2 A (VGS = 10V) RDS(ON) 2.15 (VGS = 10V) 2.Drain 0.127 +0.1 0.80-0.1 max +0.1 1.Gate 2.3 0.60-0.1 1Gate +0.15 4.60-0.15 2Drain 3Source 3.Source Absolute Maximum Ratings Ta = ... See More ⇒

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NDT4N20L

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Detailed specifications: NDT110N03, NDT15N10, NDT18N06, NDT1N70, NDT25N06, NDT2N60, NDT2N60P, NDT35N06, IRF840, NDT4N60, NDT4N65, NDT4N65P, NDT4N70, NDT50N03, NDT5N70P, NDT6N60, NDT6N60P

Keywords - NDT4N20L MOSFET specs

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