All MOSFET. NDT6N70P Datasheet

 

NDT6N70P MOSFET. Datasheet pdf. Equivalent

Type Designator: NDT6N70P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 95 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 95 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO251

NDT6N70P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDT6N70P Datasheet (PDF)

0.1. ndt6n70p.pdf Size:3144K _kexin

NDT6N70P
NDT6N70P

DIP Type MOSFET N-Channel Enhancement MOSFET NDT6N70P TO-251 ■ Features ● VDS (V) = 700V ● ID = 4.8A (VGS = 10V) 1 2 3 ● RDS(ON) < 1.8Ω (VGS = 10V) ● Low gate charge ( typical 16nC) D 1 3 2 G S Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 Tc=25℃ 4.8 Continuou

7.1. ndt6n70.pdf Size:3175K _kexin

NDT6N70P
NDT6N70P

SMD Type MOSFET N-Channel Enhancement MOSFET NDT6N70 TO-252 Unit: mm + 0.15 ■ Features 6.50- 0.15 +0.1 2.30 -0.1 + 0.2 5.30- 0.2 +0.8 0.50 -0.7 ● VDS (V) = 700V ● ID = 4.8A (VGS = 10V) ● RDS(ON) < 1.8Ω (VGS = 10V) D 0.127 ● Low gate charge ( typical 16nC) +0.1 0.80 -0.1 max G + 0.1 1 Gate 2.3 0.60- 0.1 + 0.15 4.60- 0.15 2 Drain S 3 Source ■ Absol

 9.1. ndt6n60p.pdf Size:1327K _kexin

NDT6N70P
NDT6N70P

DIP Type MOSFET N-Channel MOSFET NDT6N60P TO-251 ■ Features ● VDS (V) = 600V 1 2 3 ● ID = 6.2 A (VGS = 10V) ● RDS(ON) < 1.5Ω (VGS = 10V) ● Fast switching capability ● Low reverse transfer Capacitance 1 3 2 Drain Unit: mm Gate Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage V

9.2. ndt6n60.pdf Size:1815K _kexin

NDT6N70P
NDT6N70P

SMD Type MOSFET N-Channel MOSFET NDT6N60 TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) = 600V ● ID = 6 A (VGS = 10V) ● RDS(ON) < 1.7Ω (VGS = 10V) 0.127 0.80+0.1 max -0.1 ● Low Gate Charge ● Low Reverse transfer capacitances 1 Gate 2.3 0.60+ 0.1 - 0.1 2 Drain +0.15 4.60 -0.15 3 Source 4 Drain

 9.3. ndt6n65p.pdf Size:3425K _kexin

NDT6N70P
NDT6N70P

DIP Type MOSFET N-Channel Enhancement MOSFET NDT6N65P TO-251 ■ Features ● VDS (V) = 650V 1 2 3 ● ID = 4.8A (VGS = 10V) ● RDS(ON) < 1.8Ω (VGS = 10V) D ● Low gate charge ( typical 16nC) 1 3 2 G S Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 Tc=25℃ 4.8 Continuou

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