NTD100N02 PDF and Equivalents Search

 

NTD100N02 Specs and Replacement

Type Designator: NTD100N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO252

NTD100N02 substitution

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NTD100N02 datasheet

 ..1. Size:1441K  kexin
 ntd100n02.pdf pdf_icon

NTD100N02

SMD Type MOSFET N-Channel Enhancement MOSFET NTD100N02 (KTD100N02) TO-252 U t m ni m Features 6. 50+0. 15 - 0. 15 +0. 1 2. 30 - 0. 1 +0. 2 VDS (V) = 25V 5. 30- 0. 2 +0. 8 0. 50 - 0. 7 ID = 60 A (VGS = 20V) 4 RDS(ON) 9m (VGS = 4.5V) RDS(ON) 6m (VGS = 10V) 0. 127 0. 80+0. 1 m - 0. 1 ax Drain 1 Gate + 0. 1 2 Drain 2. 3 0. 60- 0. 1 ... See More ⇒

Detailed specifications: NDT6N65P, NDT6N70, NDT6N70P, NDT70N03, NDT70N06, NDT90N03, NDT90N04, NFT1N60, 10N60, NTD6N15, SI2306DS, SI2308DS, SI2312DS, SI2314EDS, SI2318CDS, SI2318DS, SI2324DS

Keywords - NTD100N02 MOSFET specs

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