All MOSFET. NTD100N02 Datasheet

 

NTD100N02 Datasheet and Replacement


   Type Designator: NTD100N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
 

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NTD100N02 Datasheet (PDF)

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NTD100N02

SMD Type MOSFETN-Channel Enhancement MOSFET NTD100N02 (KTD100N02)TO-252U t : mni m Features6. 50+0. 15- 0. 15+0. 12. 30 - 0. 1+0. 2 VDS (V) = 25V 5. 30- 0. 2 +0. 80. 50 - 0. 7 ID = 60 A (VGS = 20V)4 RDS(ON) 9m (VGS = 4.5V) RDS(ON) 6m (VGS = 10V)0. 1270. 80+0. 1 m- 0. 1axDrain1 Gate+ 0. 12 Drain2. 3 0. 60- 0. 1

Datasheet: NDT6N65P , NDT6N70 , NDT6N70P , NDT70N03 , NDT70N06 , NDT90N03 , NDT90N04 , NFT1N60 , IRFB4227 , NTD6N15 , SI2306DS , SI2308DS , SI2312DS , SI2314EDS , SI2318CDS , SI2318DS , SI2324DS .

Keywords - NTD100N02 MOSFET datasheet

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