SI2308DS PDF and Equivalents Search

 

SI2308DS Specs and Replacement

Type Designator: SI2308DS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOT23

SI2308DS substitution

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SI2308DS datasheet

 ..1. Size:183K  vishay
si2308ds.pdf pdf_icon

SI2308DS

Si2308DS Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.16 at VGS = 10 V 2.0 TrenchFET Power MOSFET 60 0.22 at VGS = 4.5 V 1.7 100 % Rg Tested TO-236 (SOT-23) G 1 3 D S 2 Top View Si2308DS (A8)* * Marking Code Ordering Information Si2308DS-T1 Si2308... See More ⇒

 ..2. Size:1329K  kexin
si2308ds ki2308ds.pdf pdf_icon

SI2308DS

SMD Type MOSFET N-Channel MOSFET SI2308DS (KI2308DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 2 A (VGS = 10V) 1 2 +0.02 RDS(ON) 160m (VGS = 10V) +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 220m (VGS = 4.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Paramete... See More ⇒

 ..3. Size:1319K  kexin
si2308ds.pdf pdf_icon

SI2308DS

SMD Type MOSFET N-Channel MOSFET SI2308DS (KI2308DS) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 2 A (VGS = 10V) 1 2 RDS(ON) 160m (VGS = 10V) +0.05 0.95+0.1 -0.1 0.1 -0.01 RDS(ON) 220m (VGS = 4.5V) 1.9+0.1 -0.1 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Parameter Symb... See More ⇒

 0.1. Size:1328K  kexin
si2308ds-3.pdf pdf_icon

SI2308DS

SMD Type MOSFET N-Channel MOSFET SI2308DS (KI2308DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 2 A (VGS = 10V) 1 2 +0.02 RDS(ON) 160m (VGS = 10V) +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 220m (VGS = 4.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Paramete... See More ⇒

Detailed specifications: NDT70N03, NDT70N06, NDT90N03, NDT90N04, NFT1N60, NTD100N02, NTD6N15, SI2306DS, 2N7000, SI2312DS, SI2314EDS, SI2318CDS, SI2318DS, SI2324DS, SI2328DS, SI2356DS, SI2366DS

Keywords - SI2308DS MOSFET specs

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