Si2308DSVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.16 at VGS = 10 V 2.0 TrenchFET Power MOSFET600.22 at VGS = 4.5 V 1.7 100 % Rg TestedTO-236(SOT-23)G 13 DS 2Top ViewSi2308DS (A8)** Marking CodeOrdering Information: Si2308DS-T1Si2308

SMD Type MOSFETN-Channel MOSFETSI2308DS (KI2308DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 2 A (VGS = 10V)1 2+0.02 RDS(ON) 160m (VGS = 10V) +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 220m (VGS = 4.5V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Paramete

SMD Type MOSFETN-Channel MOSFETSI2308DS (KI2308DS)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 2 A (VGS = 10V)1 2 RDS(ON) 160m (VGS = 10V)+0.050.95+0.1-0.1 0.1 -0.01 RDS(ON) 220m (VGS = 4.5V)1.9+0.1-0.11. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Parameter Symb

SMD Type MOSFETN-Channel MOSFETSI2308DS (KI2308DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 2 A (VGS = 10V)1 2+0.02 RDS(ON) 160m (VGS = 10V) +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 220m (VGS = 4.5V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Paramete

SI2308DS-T1-GE3www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT2

New ProductSi2308BDSVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.156 at VGS = 10 V 2.360 2.3 nC 100 % Rg Tested0.192 at VGS = 4.5 V 2.1 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC Converter

New ProductSi2308BDSVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.156 at VGS = 10 V 2.360 2.3 nC 100 % Rg Tested0.192 at VGS = 4.5 V 2.1 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC Converter

Si2308CDSwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESSOT-23 (TO-236) TrenchFET Gen IV power MOSFETD 100 % Rg tested3 Material categorization: for definitions of compliance please see www.vishay.com/doc?999122DS APPLICATIONS Battery switch1G DC/DC converterTop View Load switchGMarking code: G3PRODUCT SUMMARY

Shen zhen TuoFeng Semiconductor Technology co., LTDSi2308N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)0.16 @ VGS = 10 V 2.060600.22 @ VGS = 4.5 V 1.7TO-236(SOT-23)G 13 DS 2Top ViewSi2308DS (A8)**Marking CodeOrdering Information: Si2308DS-T1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter

RUMWUMW SI2308AUMW SI2308AN-Channel MOSFETSOT23 Features VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 160m (VGS = 10V) RDS(ON) 220m (VGS = 4.5V)1. GATE 2. SOURCE 3. DRAIN MARKINGMS08G 13 DS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Ta=

SI2308BDSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G