SI2328DS Datasheet and Replacement
Type Designator: SI2328DS
Marking Code: D8*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 3.3 nC
tr ⓘ - Rise Time: 11 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
Package: SOT23
SI2328DS substitution
SI2328DS Datasheet (PDF)
si2328ds.pdf

Si2328DSVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.250 at VGS = 10 V 100 1.5 100 % Rg Tested TrenchFET Power MOSFET TO-236(SOT-23)G 13 DS 2Top ViewSi2328DS (D8)**Marking CodeOrdering Information:Si2328DS-T1-E3 (Lead (Pb)-free)Si2328DS-
si2328ds.pdf

SMD Type MOSFETN-Channel Enhancement MOSFET SI2328DS (KI2328DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 VDS (V) = 100V ID = 1.5 A (VGS = 10V) RDS(ON) 250m (VGS = 4.5V)1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State Un
si2328ds.pdf

SI2328DSwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlightin
Datasheet: NTD6N15 , SI2306DS , SI2308DS , SI2312DS , SI2314EDS , SI2318CDS , SI2318DS , SI2324DS , K3569 , SI2356DS , SI2366DS , SI2372DS , SI4056DY , SI4490DY , SI4634DY , SI7898DP , SI9410DY .
History: VN67AD
Keywords - SI2328DS MOSFET datasheet
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History: VN67AD



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