SI2328DS - описание и поиск аналогов

Si2328DS Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.250 at VGS = 10 V 100 1.5 100 % Rg Tested TrenchFET Power MOSFET TO-236 (SOT-23) G 1 3 D S 2 Top View Si2328DS (D8)* *Marking Code Ordering Information Si2328DS-T1-E3 (Lead (Pb)-free) Si2328DS-

SMD Type MOSFET N-Channel Enhancement MOSFET SI2328DS (KI2328DS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 100V ID = 1.5 A (VGS = 10V) RDS(ON) 250m (VGS = 4.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Un

SI2328DS www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Backlightin

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2328 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.300 @ VGS = 10 V 1.5 (SOT-23) G 1 3 D S 2 Top View Si2328DS (D8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS "20 Con

R UMW UMW SI2328A SOT-23-3L Plastic-Encapsulate MOSFETS Features SOT 23 VDS (V) = 100V ID = 1.5 A (VGS = 10V) RDS(ON) 250m (VGS = 4.5V) MARKING Equivalent Circuit 1. GATE 2. SOURCE D 3. DRAIN G S Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 Ta=

SI2328 MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance MAXIMUM RANTINGS Characteristic Symbol Max Unit 100 Drain-Source Voltage BV V DSS Gate- Source Voltage V V GS +20 Drain Current (continuous) I 1.5 A D Drain Current (pulsed) I A DM 6 Total Device Dissipa