IRF721 Datasheet and Replacement
Type Designator: IRF721
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50(max) nS
Cossⓘ - Output Capacitance: 200(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO220
IRF721 substitution
IRF721 Datasheet (PDF)
irf7210pbf.pdf

PD - 97040IRF7210PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -12V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.007Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic
irf7210.pdf

PD- 91844AIRF7210HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -12V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.007Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefi
irf7210tr.pdf

IRF7210TRwww.VBsemi.twP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC0.0100 at VGS = - 1.8 V - 13APPLICATIONS Load Switch Battery SwitchS
Datasheet: IRF720 , IRF7201 , IRF7204 , IRF7205 , IRF7207 , IRF720A , IRF720FI , IRF720S , HY1906P , IRF722 , IRF7220 , IRF723 , IRF7233 , IRF730 , IRF730A , IRF730AL , IRF730AS .
History: STH33N20FI | APQ12SN65AH | IRF8707GPBF | IRF634 | FMV06N90E | MPVA4N70F
Keywords - IRF721 MOSFET datasheet
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History: STH33N20FI | APQ12SN65AH | IRF8707GPBF | IRF634 | FMV06N90E | MPVA4N70F



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