IRF721 Specs and Replacement
Type Designator: IRF721
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50(max) nS
Cossⓘ - Output Capacitance: 200(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO220
IRF721 substitution
- MOSFET ⓘ Cross-Reference Search
IRF721 datasheet
irf7210pbf.pdf
PD - 97040 IRF7210PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -12V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.007 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silic... See More ⇒
irf7210.pdf
PD- 91844A IRF7210 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -12V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.007 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefi... See More ⇒
irf7210tr.pdf
IRF7210TR www.VBsemi.tw P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET 0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC 0.0100 at VGS = - 1.8 V - 13 APPLICATIONS Load Switch Battery Switch S ... See More ⇒
Detailed specifications: IRF720 , IRF7201 , IRF7204 , IRF7205 , IRF7207 , IRF720A , IRF720FI , IRF720S , AOD4184A , IRF722 , IRF7220 , IRF723 , IRF7233 , IRF730 , IRF730A , IRF730AL , IRF730AS .
Keywords - IRF721 MOSFET specs
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