SM1691OSCS Specs and Replacement
Type Designator: SM1691OSCS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 5.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: SOT363
SM1691OSCS substitution
- MOSFET ⓘ Cross-Reference Search
SM1691OSCS datasheet
sm1691oscs.pdf
SM1691OSCS Single N-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description Channel 1 (NMOS) 60V/0.26A, S2 RDS(ON)= 2.2 (max.) @ VGS=10V NC D2 RDS(ON)= 2.6 (max.) @ VGS=4.5V D1 S1 G1 Channel 2 (Schottky Diode) 40V/0.35A, Top View of SOT-363 Vf= 0.4V(max.) @ IF=0.02A (6)D1 (3)D2 Vf= 0.6V(max.) @ IF=0.2A Reliable and Rugged Lead Free and Green... See More ⇒
Detailed specifications: UTT6N10Z, APM2518NU, APM2558NU, SM1105NSV, SM1200NSAS, SM1202NSAS, SM1301NSSA, SM1402NSS, 5N65, SM1A00NSF, SM1A00NSG, SM1A00NSW, SM1A02NSF, SM1A02NSFP, SM1A06NSF, SM1A06NSFP, SM1A06NSK
Keywords - SM1691OSCS MOSFET specs
SM1691OSCS cross reference
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History: CMI100N04 | AP4543GEM-HF | CS7N65FA9R
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