SM1691OSCS Datasheet and Replacement
Type Designator: SM1691OSCS
Marking Code: .M91X
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 0.26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 1.6 nC
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 5.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: SOT363
SM1691OSCS substitution
SM1691OSCS Datasheet (PDF)
sm1691oscs.pdf

SM1691OSCS Single N-Channel Enhancement Mode MOSFETwith Schottky DiodeFeatures Pin Description Channel 1 (NMOS) 60V/0.26A,S2 RDS(ON)= 2.2 (max.) @ VGS=10VNCD2 RDS(ON)= 2.6 (max.) @ VGS=4.5V D1S1G1 Channel 2 (Schottky Diode) 40V/0.35A,Top View of SOT-363Vf= 0.4V(max.) @ IF=0.02A(6)D1(3)D2 Vf= 0.6V(max.) @ IF=0.2A Reliable and Rugged Lead Free and Green
Datasheet: UTT6N10Z , APM2518NU , APM2558NU , SM1105NSV , SM1200NSAS , SM1202NSAS , SM1301NSSA , SM1402NSS , 4435 , SM1A00NSF , SM1A00NSG , SM1A00NSW , SM1A02NSF , SM1A02NSFP , SM1A06NSF , SM1A06NSFP , SM1A06NSK .
History: SM1A00NSF | STB11NM60
Keywords - SM1691OSCS MOSFET datasheet
SM1691OSCS cross reference
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History: SM1A00NSF | STB11NM60



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