SM6130NSUB Datasheet and Replacement
Type Designator: SM6130NSUB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 59.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO251
SM6130NSUB substitution
SM6130NSUB Datasheet (PDF)
sm6130nsub.pdf

SM6130NSUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/44A, RDS(ON)= 15m (max.) @ VGS=10V RDS(ON)= 17.5m (max.) @ VGS=4.5VS 100% UIS + Rg TestedDG ESD Protection Reliable and RuggedTop View of TO-251 Lead Free and Green Devices AvailableD (2) (RoHS Compliant)ApplicationsG (1) Secondary Side Synchronous Rectification DC-DC
sm6130nskp.pdf

SM6130NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/36A,DDDRDS(ON)=14.5m (max.) @ VGS=10V RDS(ON)=17m (max.) @ VGS=4.5VGPin 1S 100% UIS + Rg TestedSS ESD ProtectionDFN5x6A-8_EP Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices AvailableD D D D(RoHS Compliant)Applications(4)G Secondary Side Synchronous Rectifi
sm6130nsk.pdf

SM6130NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 60V/7.7A,DD RDS(ON)= 15m (max.) @ VGS=10V RDS(ON)= 17.5m (max.) @ VGS=4.5VSS 100% UIS + Rg TestedSG ESD ProtectionTop View of SOP-8 Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices AvailableD D D D(RoHS Compliant)Applications(4)G Secondary Side Synchronous Rectif
Datasheet: SM4839NSK , SM4842NSK , SM4843NSK , SM4844NHK , SM4850NSK , SM6002NAF , SM6009NSF , SM6012NSK , IRF730 , SM6A10NSU , SM6A17NSFP , SM6A22NSF , SM6A22NSFP , SM6A22NSU , SM6A22NSUB , SM6A23NSF , SM6A23NSFP .
History: FCPF1300N80Z | AONA66916 | PSMN009-100W
Keywords - SM6130NSUB MOSFET datasheet
SM6130NSUB cross reference
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History: FCPF1300N80Z | AONA66916 | PSMN009-100W



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