IRF733 Datasheet. Specs and Replacement

Type Designator: IRF733  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 max nS

Cossⓘ - Output Capacitance: 300 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220

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IRF733 datasheet

 0.1. Size:169K  international rectifier
 irf7338.pdf pdf_icon

IRF733

PD - 94372A IRF7338 HEXFET Power MOSFET l Ultra Low On-Resistance N-CHANNEL MOSFET N-Ch P-Ch 1 8 S1 D1 l Dual N and P Channel MOSFET 2 7 l Surface Mount G1 D1 VDSS 12V -12V l Available in Tape & Reel 3 6 S2 D2 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.034 0.150 Top View Description These N and P channel MOSFETs from International Rectifier utilize advanced processing ... See More ⇒

 0.2. Size:199K  international rectifier
 irf7331.pdf pdf_icon

IRF733

PD - 94225 IRF7331 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) Dual N-Channel MOSFET 20V 30@VGS = 4.5V 7.0A Surface Mount 45@VGS = 2.5V 5.6A Available in Tape & Reel Description 1 8 S1 D1 These N-Channel HEXFET power MOSFETs from 2 7 G1 D1 International Rectifier utilize advanced processing techniques to achieve the ex... See More ⇒

 0.3. Size:194K  international rectifier
 irf7331pbf-1.pdf pdf_icon

IRF733

IRF7331TRPbF-1 HEXFET Power MOSFET VDS 20 V 1 8 S1 D1 RDS(on) max 30 2 7 (@V = 4.5V) G1 D1 GS m RDS(on) max 3 6 S2 D2 45 (@V = 2.5V) GS 4 5 G2 D2 Qg (typical) 13 nC ID Top View SO-8 7.0 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing R... See More ⇒

 0.4. Size:214K  international rectifier
 irf7331pbf.pdf pdf_icon

IRF733

PD - 95266A IRF7331PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l Dual N-Channel MOSFET 20V 30@VGS = 4.5V 7.0A l Surface Mount 45@VGS = 2.5V 5.6A l Available in Tape & Reel l Lead-Free Description 1 8 S1 D1 These N-Channel HEXFET power MOSFETs from 2 7 G1 D1 International Rectifier utilize advanced processing techniques to achieve the extremel... See More ⇒

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Detailed specifications: IRF730AS, IRF730FI, IRF730S, IRF731, IRF732, IRF7321D2, IRF7322D1, IRF7324D1, IRFP460, IRF734, IRF7353D1, IRF737LC, IRF740, IRF7401, IRF7403, IRF7404, IRF7406

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