All MOSFET. SM3106NSF Datasheet

 

SM3106NSF Datasheet and Replacement


   Type Designator: SM3106NSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 112 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.6 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO220
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SM3106NSF Datasheet (PDF)

 ..1. Size:166K  sino
sm3106nsf.pdf pdf_icon

SM3106NSF

SM3106NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/112A,RDS(ON)= 6m (max.) @ VGS=10VRDS(ON)= 8.3m (max.) @ VGS=4.5VSD Reliable and RuggedGTop View of TO-220 Lead Free and Green Devices Available(RoHS Compliant)D 100% UIS TestedApplicationsG Optimized for UPS/Inverter Application. Power Tool Battery Pack Application.SN-Chan

 6.1. Size:267K  sino
sm3106nsu.pdf pdf_icon

SM3106NSF

SM3106NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/83A,DRDS(ON)= 4.8m (max.) @ VGS=10VSRDS(ON)= 7.5m (max.) @ VGS=4.5VG Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices Available(RoHS Compliant)D 100% UIS TestedApplicationsG Power Management in Desktop Computer orDC/DC Converters. UPS/Inverter Application.SN-Ch

 9.1. Size:444K  huashuo
hsm3107.pdf pdf_icon

SM3106NSF

HSM3107 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3107 is the high cell density trenched P-V -30 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 42 m DS(ON),typconverter applications. I -5 A DThe HSM3107 meet the RoHS and Green Product requirement with full function reliability approved.

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History: PJM2319PSA | APT18M80B | AP09N20H | STU6NF10 | SI2312A | HYG110P04LQ2C2 | PE6W8DX

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