SM3106NSU
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM3106NSU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 83
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 460
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048
Ohm
Package:
TO252
SM3106NSU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM3106NSU
Datasheet (PDF)
..1. Size:267K sino
sm3106nsu.pdf 
SM3106NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/83A,DRDS(ON)= 4.8m (max.) @ VGS=10VSRDS(ON)= 7.5m (max.) @ VGS=4.5VG Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices Available(RoHS Compliant)D 100% UIS TestedApplicationsG Power Management in Desktop Computer orDC/DC Converters. UPS/Inverter Application.SN-Ch
6.1. Size:166K sino
sm3106nsf.pdf
SM3106NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/112A,RDS(ON)= 6m (max.) @ VGS=10VRDS(ON)= 8.3m (max.) @ VGS=4.5VSD Reliable and RuggedGTop View of TO-220 Lead Free and Green Devices Available(RoHS Compliant)D 100% UIS TestedApplicationsG Optimized for UPS/Inverter Application. Power Tool Battery Pack Application.SN-Chan
9.1. Size:444K huashuo
hsm3107.pdf
HSM3107 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3107 is the high cell density trenched P-V -30 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 42 m DS(ON),typconverter applications. I -5 A DThe HSM3107 meet the RoHS and Green Product requirement with full function reliability approved.
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