SM3005NAF PDF and Equivalents Search

 ..1. Size:154K  sino
 sm3005naf.pdf

SM3005NAF N-Channel Enhancement Mode MOSFET Features Pin Description 30V/110A, RDS(ON)= 3.9m (max.) @ VGS=10V RDS(ON)= 5.2m (max.) @ VGS=4.5V S D 100% UIS + Rg Tested G Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Secondary Rectifier For SMPS. S N-Channel MOSFET Ordering... See More ⇒

 7.1. Size:240K  sino
 sm3005nsf.pdf

SM3005NSF N-Channel Enhancement Mode MOSFET Features Pin Description 30V/100A, RDS(ON)= 4.5m (max.) @ VGS=10V RDS(ON)= 7.1m (max.) @ VGS=4.5V S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) D 100% UIS Tested Applications G Power Management in Secondary Rectifier For SMPS. UPS/Inverter Application. S Battery P... See More ⇒

 9.1. Size:244K  siemens
 bsm300gb120dlc.pdf

Technische Information / technical information IGBT-Module BSM300GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro... See More ⇒

 9.2. Size:137K  siemens
 bsm300ga170dn2e3166.pdf

BSM300GA170DN2 E3166 IGBT Power Module Preliminary data Half-bridge Including fast free-wheeling diodes Enlarged diode area Package with insulated metal base plate RG on,min = 5.6 Ohm Type VCE IC Package Ordering Code BSM300GA170DN2 E3166 1700V 440A SINGLE SWITCH 1 C67070-A2710-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1700 V ... See More ⇒

 9.3. Size:243K  infineon
 bsm300gb120dlc.pdf

Technische Information / technical information IGBT-Module BSM300GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro... See More ⇒

 9.4. Size:286K  eupec
 bsm300gar120dlc.pdf

Technische Information / technical information IGBT-Module BSM300GAR120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorl ufige Daten / preliminary data H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emit... See More ⇒

 9.5. Size:246K  eupec
 bsm300ga120dlcs.pdf

Technische Information / technical information IGBT-Module BSM300GA120DLCS IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values E 3 B 2 CBB32 1322 14DD D 6 6 6 6 F 3FB 2 3 CBB326 B4 3 E 3 B 2 4 32 3CF B2 6 6 !6 6 6 " 6#$% & 6 ... See More ⇒

 9.6. Size:124K  eupec
 bsm300gb60dlc.pdf

Technische Information / Technical Information IGBT-Module BSM 300 GB 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 65 C IC,nom. 300 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 375 A Periodischer Kollektor Spitzenstrom... See More ⇒

 9.7. Size:236K  eupec
 bsm300ga120dn2 bsm300ga120dn2s.pdf

BSM 300 GA 120 DN2 IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 300 GA 120 DN2 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70 BSM 300 GA 120 DN2 S 1200V 430A SSW SENSE 1 C67070-A2017-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collect... See More ⇒

 9.8. Size:113K  eupec
 bsm300ga170dlc.pdf

Technische Information / Technical Information IGBT-Module BSM 300 GA 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 300 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 600 A Periodischer Kollektor Spitzens... See More ⇒

 9.9. Size:230K  eupec
 bsm300ga170dn2 bsm300ga170dn2s.pdf

BSM 300 GA 170 DN2 IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 5.6 Ohm Type VCE IC Package Ordering Code BSM 300 GA 170 DN2 1700V 440A SINGLE SWITCH 1 C67070-A2706-A67 BSM 300 GA 170 DN2 S 1700V 440A SSW SENSE 1 C67070-A2708-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter vo... See More ⇒

 9.10. Size:273K  eupec
 bsm300ga120dlc.pdf

Technische Information / technical information IGBT-Module BSM300GA120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro... See More ⇒

 9.11. Size:926K  globaltech semi
 gsm3009s.pdf

GSM3009S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3009S, N-Channel enhancement mode 30V/35A,RDS(ON)=8.5m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/20A,RDS(ON)=11.5m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) v... See More ⇒

 9.12. Size:2076K  huashuo
 hsm3002.pdf

HSM3002 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3002 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 18 m synchronous buck converter applications. ID 7 A The HSM3002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili... See More ⇒

 9.13. Size:2058K  huashuo
 hsm3006.pdf

HSM3006 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3006 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON RDS(ON),max 6 m and gate charge for most of the synchronous buck converter applications. ID 13 A The HSM3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili... See More ⇒