SM3005NAFN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/110A, RDS(ON)= 3.9m(max.) @ VGS=10V RDS(ON)= 5.2m(max.) @ VGS=4.5VSD 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-220 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Secondary Rectifier For SMPS.SN-Channel MOSFETOrdering

SM3005NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/100A, RDS(ON)= 4.5m (max.) @ VGS=10V RDS(ON)= 7.1m (max.) @ VGS=4.5VSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)D 100% UIS TestedApplicationsG Power Management in Secondary Rectifier For SMPS. UPS/Inverter Application.S Battery P

Technische Information / technical informationIGBT-ModuleBSM300GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

BSM300GA170DN2 E3166IGBT Power ModulePreliminary data Half-bridge Including fast free-wheeling diodes Enlarged diode area Package with insulated metal base plate RG on,min = 5.6 OhmType VCE IC Package Ordering CodeBSM300GA170DN2 E3166 1700V 440A SINGLE SWITCH 1 C67070-A2710-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 V

Technische Information / technical informationIGBT-ModuleBSM300GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

Technische Information / technical informationIGBT-ModuleBSM300GAR120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emit

Technische Information / technical informationIGBT-ModuleBSM300GA120DLCSIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesE 3 B 2 CBB32 1322 14DD D 6 6 6 6F 3FB 2 3 CBB326 B4 3E 3 B 2 4 32 3CF B2 6 6 !6 6 6 " 6#$% &6

Technische Information / Technical InformationIGBT-ModuleBSM 300 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 65C IC,nom. 300 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 375 APeriodischer Kollektor Spitzenstrom

BSM 300 GA 120 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 300 GA 120 DN2 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70BSM 300 GA 120 DN2 S 1200V 430A SSW SENSE 1 C67070-A2017-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollect

Technische Information / Technical InformationIGBT-ModuleBSM 300 GA 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungVCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 300 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 600 APeriodischer Kollektor Spitzens

BSM 300 GA 170 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 5.6 OhmType VCE IC Package Ordering CodeBSM 300 GA 170 DN2 1700V 440A SINGLE SWITCH 1 C67070-A2706-A67BSM 300 GA 170 DN2 S 1700V 440A SSW SENSE 1 C67070-A2708-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter vo

Technische Information / technical informationIGBT-ModuleBSM300GA120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

GSM3009S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3009S, N-Channel enhancement mode 30V/35A,RDS(ON)=8.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/20A,RDS(ON)=11.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) v

HSM3002 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3002 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 18 m synchronous buck converter applications. ID 7 A The HSM3002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

HSM3006 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),max 6 m and gate charge for most of the synchronous buck converter applications. ID 13 A The HSM3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili