SM2290NSQG Datasheet and Replacement
Type Designator: SM2290NSQG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 27 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: DFN2X2A-6
SM2290NSQG substitution
SM2290NSQG Datasheet (PDF)
sm2290nsqg.pdf

SM2290NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 150V/1.6A,DDRDS(ON) = 360m (max.) @ VGS =10VG S ESD ProtectionPin 1DD 100% UIS TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDDDD (RoHS Compliant)Applications(3)G For POE Power Primary Side Switch for(4)SLow. Power DC/DC Converters.
Datasheet: SM4506NHKP , SM2203NSQG , SM2204NSQG , SM2206NSQG , SM2208NSQG , SM2210NSQG , SM2225NSQG , SM2260NSQG , MMIS60R580P , SM2320NSA , SM2326NSAN , SM2360NSA , SM2370NSA , SM2404NSAN , SM2416NSAN , SM2430NSAN , SM2501NSU .
History: STH12NA60FI | FQD5N30TM | MDF7N50BTH | IRF7526D1 | H5N3008P
Keywords - SM2290NSQG MOSFET datasheet
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History: STH12NA60FI | FQD5N30TM | MDF7N50BTH | IRF7526D1 | H5N3008P



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