All MOSFET. SM2370NSA Datasheet

 

SM2370NSA MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM2370NSA
   Marking Code: A70*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.156 Ohm
   Package: SOT23

 SM2370NSA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM2370NSA Datasheet (PDF)

 ..1. Size:241K  sino
 sm2370nsa.pdf

SM2370NSA SM2370NSA

SM2370NSAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/2A, RDS(ON)= 156m (max.) @ VGS=10VS RDS(ON)= 176m (max.) @ VGS=4.5VG ESD ProtectionTop View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in TV Inveter.SN-Channel MOSFETOrdering and Markin

 9.1. Size:950K  globaltech semi
 gsm2376.pdf

SM2370NSA SM2370NSA

GSM2376 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2376, N-Channel enhancement mode 60V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/2.8A,RDS(ON)=78m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

 9.2. Size:953K  globaltech semi
 gsm2379.pdf

SM2370NSA SM2370NSA

GSM2379 GSM2379 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-3.6A,RDS(ON)=135m@VGS=-10.0V GSM2379, P-Channel enhancement mode -60V/-2.6A,RDS(ON)=150m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist

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