SM2370NSA Datasheet and Replacement. Cross Reference Search

SM2370NSA Datasheet (PDF)

..1. Size:241K sino
sm2370nsa.pdf pdf_icon

SM2370NSAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/2A, RDS(ON)= 156m (max.) @ VGS=10VS RDS(ON)= 176m (max.) @ VGS=4.5VG ESD ProtectionTop View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in TV Inveter.SN-Channel MOSFETOrdering and Markin

9.1. Size:950K globaltech semi
gsm2376.pdf pdf_icon

GSM2376 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2376, N-Channel enhancement mode 60V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/2.8A,RDS(ON)=78m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

9.2. Size:953K globaltech semi
gsm2379.pdf pdf_icon

GSM2379 GSM2379 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-3.6A,RDS(ON)=135m@VGS=-10.0V GSM2379, P-Channel enhancement mode -60V/-2.6A,RDS(ON)=150m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist

Datasheet: SM2208NSQG , SM2210NSQG , SM2225NSQG , SM2260NSQG , SM2290NSQG , SM2320NSA , SM2326NSAN , SM2360NSA , 60N06 , SM2404NSAN , SM2416NSAN , SM2430NSAN , SM2501NSU , SM2518NSUC , SM2518NUB , SM2558NUB , SM2604NSC .