SM2518NUB Datasheet and Replacement
Type Designator: SM2518NUB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO251
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SM2518NUB Datasheet (PDF)
sm2518nub.pdf

SM2518NUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=8m (Typ.) @ VGS=10VRDS(ON)=15m (Typ.) @ VGS=4.5VSD Reliable and RuggedG Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel
sm2518nsuc.pdf

SM2518NSUCN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=9.5m (max.) @ VGS=10VRDS(ON)=14.5m (max.) @ VGS=4.5VSD Reliable and Rugged G Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251S(RoHS Compliant)D 100% UIS + Rg TestedGApplications Power Management in Desktop Computer or DC/DC Converters.SN-Channel
gsm2519.pdf

GSM2519 GSM2519 20V N&P Pair Enhancement Mode MOSFETProduct Description Features GSM2519, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/4.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/3.6A,RDS(ON)=60m@VGS=2.5V 20V/2.4A,RDS(ON)=80m@VGS=1.8V These devices are particularly suited for low P-Channelvoltage
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDMS9620S | IRFI7536G | WMM11N80M3
Keywords - SM2518NUB MOSFET datasheet
SM2518NUB cross reference
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History: FDMS9620S | IRFI7536G | WMM11N80M3



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