SM2670NSC Datasheet and Replacement
Type Designator: SM2670NSC
Marking Code: C70*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 4.8 nC
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.156 Ohm
Package: SOT23-6
SM2670NSC substitution
SM2670NSC Datasheet (PDF)
sm2670nsc.pdf

SM2670NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/2.6A,SD RDS(ON)= 156m(max.) @ VGS=10VDG RDS(ON)= 176m(max.) @ VGS=4.5VDD ESD Protection 100% UIS TestedTop View of SOT-23-6 Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDDDD(RoHS Compliant)Applications(3)G Power Management in DC/DC Converter.(4)S
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK1120 | HUF75637S3S | STM8405 | VN0104N7
Keywords - SM2670NSC MOSFET datasheet
SM2670NSC cross reference
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SM2670NSC lookup
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History: 2SK1120 | HUF75637S3S | STM8405 | VN0104N7



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