All MOSFET. SM4522NHKP Datasheet

 

SM4522NHKP Datasheet and Replacement


   Type Designator: SM4522NHKP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00265 Ohm
   Package: DFN5X6-8
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SM4522NHKP Datasheet (PDF)

 ..1. Size:267K  sino
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SM4522NHKP

SM4522NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/110A,DDDRDS(ON)=2.65m (Max.) @ VGS=10V D RDS(ON)=4.3m (Max.) @ VGS=4.5V Reliable and RuggedGPin 1SSS Lower Qg and Qgd for high-speed switchingDFN5x6A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD ESD protection Lead Free and Green Devices

 9.1. Size:609K  secos
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SM4522NHKP

SSM452 -6 A, -30V, RDS(ON) 55m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES SOT-223 Simple Drive Requirement Lower On-resistanc

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History: FDMS9620S | IRFI7536G | WMM11N80M3

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