All MOSFET. IRF7413 Datasheet

 

IRF7413 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7413
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min) V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SO8

 IRF7413 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7413 Datasheet (PDF)

 ..1. Size:123K  international rectifier
irf7413.pdf

IRF7413 IRF7413

PD- 91330FIRF7413SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max(mW) IDApplicationsl High frequency DC-DC converters30V 11@VGS = 10V 12ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6SEffective COSS to Simplify Design, (See DApp. Note AN1001) 45G Dl Fully Characterized Avalan

 ..2. Size:258K  international rectifier
irf7413pbf.pdf

IRF7413 IRF7413

PD - 95017CIRF7413PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance AA1 8l N-Channel MosfetS Dl Surface Mount2 7S D VDSS = 30Vl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl 100% RG TestedRDS(on) = 0.011l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutil

 ..3. Size:258K  infineon
irf7413pbf.pdf

IRF7413 IRF7413

PD - 95017CIRF7413PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance AA1 8l N-Channel MosfetS Dl Surface Mount2 7S D VDSS = 30Vl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl 100% RG TestedRDS(on) = 0.011l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutil

 ..4. Size:1818K  kexin
irf7413.pdf

IRF7413 IRF7413

SMD Type MOSFETN-Channel MOSFETIRF7413 (KRF7413)SOP-8 Features VDS (V) = 30V ID = 12 A (VGS = 10V)1.50 0.15 RDS(ON) 11m (VGS = 10V)1 8S D1 Source 5 Drain2 7S D6 Drain2 Source3 67 DrainS D 3 Source8 Drain4 Gate45G DTop View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V

 0.1. Size:257K  international rectifier
irf7413qpbf.pdf

IRF7413 IRF7413

PD - 96112IRF7413QPbFHEXFET Power MOSFETAl Advanced Process TechnologyA1 8S Dl Ultra Low On-Resistance2 7l N Channel MOSFETS D VDSS = 30Vl Surface Mount3 6S Dl Available in Tape & Reel4 5l 150C Operating TemperatureG DRDS(on) = 0.011l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,

 0.2. Size:284K  international rectifier
irf7413zpbf.pdf

IRF7413 IRF7413

PD - 95335DIRF7413ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Control FET for Notebook Processor10m @VGS = 10VPower 30V 13Al Control and Synchronous RectifierMOSFET for Graphics Cards and POLAConverters in Computing, NetworkingA1 8S Dand Telecommunication Systems2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate ImpedanceSO-8l Very Low RDS

 0.3. Size:116K  international rectifier
irf7413a.pdf

IRF7413 IRF7413

PD - 9.1613AIRF7413APRELIMINARYHEXFET Power MOSFETA Generation V TechnologyA1 8S D Ultra Low On-Resistance2 7 N-Channel Mosfet VDSS = 30VS D Surface Mount3 6S D Available in Tape & Reel4 5G D Dynamic dv/dt RatingRDS(on) = 0.0135 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

 0.4. Size:227K  international rectifier
irf7413pbf-1.pdf

IRF7413 IRF7413

IRF7413PbF-1HEXFET Power MOSFETAVDS 30 V A1 8S DRDS(on) max 0.011 2 7S D(@V = 10V)GS3 6Qg (typical) 52 nCS DID 45G D13 A(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme

 0.5. Size:259K  international rectifier
irf7413gpbf.pdf

IRF7413 IRF7413

PD - 96250IRF7413GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance AA1 8l N-Channel MosfetS Dl Surface Mount2 7S D VDSS = 30Vl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl 100% RG TestedRDS(on) = 0.011l Lead-Freel Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International

 0.6. Size:286K  international rectifier
irf7413zgpbf.pdf

IRF7413 IRF7413

PD - 96249IRF7413ZGPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Control FET for Notebook Processor10m @VGS = 10VPower 30V 13Al Control and Synchronous RectifierMOSFET for Graphics Cards and POLAConverters in Computing, NetworkingA1 8S Dand Telecommunication Systems2 7S D3 6S DBenefits4 5l Ultra-Low Gate ImpedanceG Dl Very Low RDS(on)

 0.7. Size:284K  infineon
irf7413zpbf.pdf

IRF7413 IRF7413

PD - 95335DIRF7413ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Control FET for Notebook Processor10m @VGS = 10VPower 30V 13Al Control and Synchronous RectifierMOSFET for Graphics Cards and POLAConverters in Computing, NetworkingA1 8S Dand Telecommunication Systems2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate ImpedanceSO-8l Very Low RDS

 0.8. Size:1671K  cn vbsemi
irf7413trpbf.pdf

IRF7413 IRF7413

IRF7413TRPBFwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Datasheet: IRF7404 , IRF7406 , IRF740A , IRF740AL , IRF740AS , IRF740FI , IRF740S , IRF741 , 2SK3878 , IRF7413A , IRF7416 , IRF742 , IRF7421D1 , IRF7422D2 , IRF743 , IRF744 , NCEP85T16D .

 

 
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