SM3401NSQG PDF and Equivalents Search

 

SM3401NSQG Specs and Replacement

Type Designator: SM3401NSQG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.3 nS

Cossⓘ - Output Capacitance: 510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: DFN3.3X3.3B-8

SM3401NSQG substitution

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SM3401NSQG datasheet

 ..1. Size:152K  sino
sm3401nsqg.pdf pdf_icon

SM3401NSQG

SM3401NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/50A, D RDS(ON) =2.8m (max.) @ VGS =10V RDS(ON) =3.6m (max.) @ VGS =4.5V G S S S 100% UIS + Rg Tested DFN3.3x3.3-8(Saw-EP) Avalanche Rated Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Com... See More ⇒

 8.1. Size:235K  taiwansemi
tsm3401cx.pdf pdf_icon

SM3401NSQG

TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info... See More ⇒

 8.2. Size:1426K  globaltech semi
gsm3401s.pdf pdf_icon

SM3401NSQG

GSM3401S GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.2A RDS(ON)=80m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A RDS(ON)=105m @VGS=-2.5V Super high density cell design for extremely These devi... See More ⇒

 8.3. Size:612K  globaltech semi
gsm3401as.pdf pdf_icon

SM3401NSQG

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-1.8 RDS(ON)=80m @VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105m @VGS=-2.5V These devices are particularly suited for low Super high density cell de... See More ⇒

Detailed specifications: SM6027NSKP, SM6027NSU, SM6028NSFP, SM6028NSKP, SM3323NHQA, SM3323NHQG, SM3324NHQG, SM3326NHQA, IRFZ48N, SM4029NSK, SM4029NSKP, SM4029NSU, SM4031NHKP, SM4033NHU, SM3320NSQG, SM3322NHQA, SM6018NSKP

Keywords - SM3401NSQG MOSFET specs

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