All MOSFET. SM3401NSQG Datasheet

 

SM3401NSQG MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM3401NSQG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11.3 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: DFN3.3X3.3B-8

 SM3401NSQG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM3401NSQG Datasheet (PDF)

 ..1. Size:152K  sino
 sm3401nsqg.pdf

SM3401NSQG SM3401NSQG

SM3401NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A, DRDS(ON) =2.8m(max.) @ VGS =10VRDS(ON) =3.6m(max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3.3x3.3-8(Saw-EP) Avalanche Rated Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Com

 8.1. Size:235K  taiwansemi
 tsm3401cx.pdf

SM3401NSQG SM3401NSQG

TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info

 8.2. Size:1426K  globaltech semi
 gsm3401s.pdf

SM3401NSQG SM3401NSQG

GSM3401S GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.2A RDS(ON)=80m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A RDS(ON)=105m@VGS=-2.5V Super high density cell design for extremely These devi

 8.3. Size:612K  globaltech semi
 gsm3401as.pdf

SM3401NSQG SM3401NSQG

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-1.8 RDS(ON)=80m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105m@VGS=-2.5V These devices are particularly suited for low Super high density cell de

 8.4. Size:546K  jsmsemi
 jsm3401l.pdf

SM3401NSQG SM3401NSQG

JSM3401LP-Channel 30-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-23-3L0.053@-10V3-30V 0.065@-4.5V 1.GATE-4.2A2.SOURCE0.085@-2.5V3.DRAIN12MARKING Equivalent CircuitGeneral FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageA19TF wAPPLICATION*wweek codeLoad Switch for Portable DevicesDC/DC ConverterMaximu

 8.5. Size:9601K  cn sps
 sm3401.pdf

SM3401NSQG SM3401NSQG

SM3401Features Schematic diagram SOT-23Top ViewGDSPRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 52@ VGS = -10V65@ VGS = -4.5V -30V -4.4A 85 @ VGS =- 2.5V Ordering Information Ordering Number Pin AssignmentPackage PackingLead Free Halogen Free 1 2 3 SM3401SR GSM3401SR L SOT-23 G S D Tape ReelSM3401 X X X (1) SSOT-23(1)Packa

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