IRF7422D2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF7422D2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7(min) V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SO8

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IRF7422D2 Datasheet (PDF)

..1. Size:119K international rectifier
irf7422d2.pdf pdf_icon

PD- 91412LIRF7422D2FETKY TM MOSFET & Schottky DiodeA Co-packaged HEXFET PowerA1 8A DMOSFET and Schottky DiodeVDSS = -20V2 7 Ideal For Buck Regulator ApplicationsA D P-Channel HEXFET3 6RDS(on) = 0.09S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky Vf = 0.52V SO-8 FootprintTop ViewDescriptionThe FETKYTM family of Co-pack

..2. Size:374K international rectifier
irf7422d2pbf.pdf pdf_icon

PD - 95310IRF7422D2PbF Lead-Freewww.irf.com 110/13/04IRF7422D2PbF2 www.irf.comIRF7422D2PbFwww.irf.com 3IRF7422D2PbF4 www.irf.comIRF7422D2PbFwww.irf.com 5IRF7422D2PbF6 www.irf.comIRF7422D2PbFSO-8 (Fetky) Package OutlineINCHES MILLIMET ERSDIMD B MIN MAX MIN MAX5 A .0532 .0688 1.35 1.75AA1 .0040 .0098 0.10 0.25b .013 .020 0.33 0.518 7 6 5c

8.1. Size:122K international rectifier
irf7424pbf.pdf pdf_icon

PD- 95343IRF7424PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 13.5@VGS = -10V -11Al Surface Mount22@VGS = -4.5V -8.8Al Available in Tape & Reell Lead-FreeA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremely low on-resista

8.2. Size:223K international rectifier
irf7421d1pbf.pdf pdf_icon

PD- 95304IRF7421D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET PowerAA1 8MOSFET and Schottky Diode A DVDSS = 30Vl Ideal For Synchronous Regulator 2 7S DApplications3 6S DRDS(on) = 0.035l Generation V Technology4 5G Dl SO-8 FootprintSchottky Vf = 0.39Vl Lead-FreeTop View DescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky

8.3. Size:152K international rectifier
irf7425pbf.pdf pdf_icon

PD- 96062IRF7425PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET20V 8.2@VGS = -4.5V -15Al Surface Mount13@VGS = -2.5V -13Al Available in Tape & Reell Lead-FreeA1 8Description S DThese P-Channel HEXFET Power MOSFETs from2 7S DInternational Rectifier utilize advanced processing3 6techniques to achieve the extremely

8.4. Size:153K international rectifier
irf7420pbf.pdf pdf_icon

PD - 95633AIRF7420PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 14m@VGS = -4.5V -11.5Al Surface Mount17.5m@VGS = -2.5V -9.8Al Available in Tape & Reel26m@VGS = -1.8V -8.1Al Lead-FreeDescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniq

8.5. Size:91K international rectifier
irf7425.pdf pdf_icon

PD- 94022AIRF7425HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET20V 8.2@VGS = -4.5V -15A Surface Mount13@VGS = -2.5V -13A Available in Tape & ReelA1 8Description S DThese P-Channel HEXFET Power MOSFETs from2 7S DInternational Rectifier utilize advanced processing3 6techniques to achieve the ex

8.6. Size:229K international rectifier
irf7424.pdf pdf_icon

PD- 94024AIRF7424HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-30V 13.5@VGS = -10V -11A Surface Mount22@VGS = -4.5V -8.8A Available in Tape & ReelA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremely low on-

8.7. Size:178K international rectifier
irf7421d1.pdf pdf_icon

PD- 91411CIRF7421D1PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET PowerAA1 8MOSFET and Schottky Diode A DVDSS = 30V Ideal For Synchronous Regulator 2 7S DApplications3 6S DRDS(on) = 0.035 Generation V Technology45G D SO-8 FootprintSchottky Vf = 0.39VTop View DescriptionThe FETKYTM family of co-packaged HEX

8.8. Size:190K international rectifier
irf7420pbf-1.pdf pdf_icon

IRF7420PbF-1HEXFET Power MOSFETA1 8VDS -12 VS DRDS(on) max 2 7S D14 m(@V = -4.5V)GS3 6S DRDS(on) max 17.5 m4 5(@V = -2.5V)GS G DRDS(on) max 26 mSO-8Top View(@V = -1.8V)GSQg (typical) 38 nCID -11.5 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Sur

8.9. Size:182K international rectifier
irf7425pbf-1.pdf pdf_icon

IRF7425PbF-1HEXFET Power MOSFETVDS -20 VA1 8S DRDS(on) max 8.22 7(@V = -4.5V) S DGSmRDS(on) max 3 6S D13(@V = -2.5V)GS4 5G DQg (typical) 87 nCID SO-8-15 A Top View(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoH

8.10. Size:103K international rectifier
irf7420.pdf pdf_icon

PD - 94278IRF7420HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 14m@VGS = -4.5V -11.5A Surface Mount17.5m@VGS = -2.5V -9.8A Available in Tape & Reel26m@VGS = -1.8V -8.1ADescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniques to achieve the ex

8.11. Size:199K international rectifier
irf7424gpbf.pdf pdf_icon

PD-96256IRF7424GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 13.5@VGS = -10V -11Al Surface Mount22@VGS = -4.5V -8.8Al Available in Tape & Reell Lead-Freel Halogen-FreeA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremel

8.12. Size:482K st
irf740 irf741 irf742 irf743-fi.pdf pdf_icon

8.13. Size:191K samsung
irfp340 irfp341 irfp342 irfp343 irf740 irf741 irf742 irf743.pdf pdf_icon

8.14. Size:122K infineon
irf7424pbf.pdf pdf_icon

8.15. Size:192K infineon
irf7425pbf.pdf pdf_icon

IRF7425PbFHEXFET Power MOSFETVDS -20 VA1 8RDS(on) max S D8.2(@V = -4.5V) 2 7GSS DmRDS(on) max 3 613S D(@V = -2.5V)GS4 5Qg (typical) 87 nC G DID -15 ASO-8Top View(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Co

8.16. Size:153K infineon
irf7420pbf.pdf pdf_icon

8.17. Size:1476K cn vbsemi
irf7425tr.pdf pdf_icon

IRF7425TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

8.18. Size:873K cn vbsemi
irf7424trpbf.pdf pdf_icon

IRF7424TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop

Datasheet: IRF740FI , IRF740S , IRF741 , IRF7413 , IRF7413A , IRF7416 , IRF742 , IRF7421D1 , SPP20N60C3 , IRF743 , IRF744 , NCEP85T16D , NCEP85T25D , NCEP85T25T , NCEP85T35T , IRF750A , IRF7521D1 .

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IRF7422D2 MOSFET. Datasheet pdf. Equivalent

IRF7422D2 Datasheet (PDF)

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